Room-temperature far-infrared emission from a self-organized InGaAs/GaAs quantum-dot laser
dc.contributor.author | Krishna, Sanjay | en_US |
dc.contributor.author | Qasaimeh, Omar | en_US |
dc.contributor.author | Bhattacharya, Pallab K. | en_US |
dc.contributor.author | McCann, Patrick J. | en_US |
dc.contributor.author | Namjou, Khosrow | en_US |
dc.date.accessioned | 2010-05-06T23:00:35Z | |
dc.date.available | 2010-05-06T23:00:35Z | |
dc.date.issued | 2000-06-05 | en_US |
dc.identifier.citation | Krishna, Sanjay; Qasaimeh, Omar; Bhattacharya, Pallab; McCann, Patrick J.; Namjou, Khosrow (2000). "Room-temperature far-infrared emission from a self-organized InGaAs/GaAs quantum-dot laser." Applied Physics Letters 76(23): 3355-3357. <http://hdl.handle.net/2027.42/70976> | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/70976 | |
dc.description.abstract | Far-infrared spontaneous emission at 300 K and lower temperatures, due to intersubband transitions in self-organized In0.4Ga0.6As/GaAsIn0.4Ga0.6As/GaAs quantum dots, has been characterized. Measurements were made with a multidot layer near-infrared (∼1 μm) interband laser. The far-infrared signal, centered at 12 μm, was enhanced after the interband transition reached threshold at 300 K. The results are explained in terms of the carrier dynamics in the dots. © 2000 American Institute of Physics. | en_US |
dc.format.extent | 3102 bytes | |
dc.format.extent | 65207 bytes | |
dc.format.mimetype | text/plain | |
dc.format.mimetype | application/pdf | |
dc.publisher | The American Institute of Physics | en_US |
dc.rights | © The American Institute of Physics | en_US |
dc.title | Room-temperature far-infrared emission from a self-organized InGaAs/GaAs quantum-dot laser | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122 | en_US |
dc.contributor.affiliationother | Laboratory for Electronic Properties of Materials, School of Electrical and Computer Engineering, University of Oklahoma, Norman, Oklahoma 73019-1023 | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/70976/2/APPLAB-76-23-3355-1.pdf | |
dc.identifier.doi | 10.1063/1.126646 | en_US |
dc.identifier.source | Applied Physics Letters | en_US |
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dc.owningcollname | Physics, Department of |
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