Large scale surface structure formed during GaAs (001) homoepitaxy

Orme, C.; Johnson, M. D.; Sudijono, J. L.; Leung, K. T.; Orr, B. G.

Large scale surface structure formed during GaAs (001) homoepitaxy

dc.contributor.author	Orme, C.	en_US
dc.contributor.author	Johnson, M. D.	en_US
dc.contributor.author	Sudijono, J. L.	en_US
dc.contributor.author	Leung, K. T.	en_US
dc.contributor.author	Orr, B. G.	en_US
dc.date.accessioned	2010-05-06T23:01:15Z
dc.date.available	2010-05-06T23:01:15Z
dc.date.issued	1994-02-14	en_US
dc.identifier.citation	Orme, C.; Johnson, M. D.; Sudijono, J. L.; Leung, K. T.; Orr, B. G. (1994). "Large scale surface structure formed during GaAs (001) homoepitaxy." Applied Physics Letters 64(7): 860-862. <http://hdl.handle.net/2027.42/70983>	en_US
dc.identifier.uri	https://hdl.handle.net/2027.42/70983
dc.description.abstract	Atomic force microscopy studies have been performed on GaAs (001) homoepitaxy films grown by molecular beam epitaxy. Multilayered features are seen to evolve when the growth conditions favor island nucleation. As the epilayer thickness is increased these features grow in all dimensions but the angle of inclination remains approximately constant at 1°. The mounding does not occur on surfaces grown in step flow. We propose that the multilayered features are an unstable growth mode which relies on island nucleation and the presence of a step edge barrier.	en_US
dc.format.extent	3102 bytes
dc.format.extent	621807 bytes
dc.format.mimetype	text/plain
dc.format.mimetype	application/pdf
dc.publisher	The American Institute of Physics	en_US
dc.rights	© The American Institute of Physics	en_US
dc.title	Large scale surface structure formed during GaAs (001) homoepitaxy	en_US
dc.type	Article	en_US
dc.subject.hlbsecondlevel	Physics	en_US
dc.subject.hlbtoplevel	Science	en_US
dc.description.peerreviewed	Peer Reviewed	en_US
dc.contributor.affiliationum	H. M. Randall Laboratory, University of Michigan, Ann Arbor, Michigan 48109‐1120	en_US
dc.description.bitstreamurl	http://deepblue.lib.umich.edu/bitstream/2027.42/70983/2/APPLAB-64-7-860-1.pdf
dc.identifier.doi	10.1063/1.111004	en_US
dc.identifier.source	Applied Physics Letters	en_US
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dc.owningcollname	Physics, Department of

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