JavaScript is disabled for your browser. Some features of this site may not work without it.
Pseudomorphic InGaAs base ballistic hot‐electron device
Seo, K.; Heiblum, M.; Knoedler, C. M.; Hong, W‐p.; Bhattacharya, P.
1988-11-14
Citation:Seo, K.; Heiblum, M.; Knoedler, C. M.; Hong, W‐P.; Bhattacharya, P. (1988). "Pseudomorphic InGaAs base ballistic hot‐electron device." Applied Physics Letters 53(20): 1946-1948. <http://hdl.handle.net/2027.42/71077>
Abstract: We report the first successful incorporation of a pseudomorphic InGaAs base in a ballistic hot‐electron device. The device, with a 28‐nm‐thick In0.15Ga0.85As base, had a collector‐base breakdown voltage of 0.55 V and a maximum current transfer ratio of 0.89 at 4.2 K, considerably higher than the 0.75 in a comparable GaAs‐base device. Electron energy spectroscopy measurements revealed that at least 30% of the injected electrons traversed the InGaAs base ballistically, causing a strong modulation in the injected currents into the quantized base. The Γ‐L valley separation in the strained In0.15Ga0.85As was estimated to be about 410 meV.
