Temperature-dependent carrier dynamics in self-assembled InGaAs quantum dots

Abstract

We measured the transient temperature-dependent carrier population in the confined states of self-assembled In0.4Ga0.6AsIn0.4Ga0.6As quantum dots as well as those of the surrounding wetting layer and barrier region using differential transmission spectroscopy. Results show directly that thermal reemission and nonradiative recombination contribute significantly to the dynamics above 100 K. We offer results of an ensemble Monte Carlo simulation to explain the contribution of these thermally activated processes. © 2002 American Institute of Physics.