Ultraviolet emission of silicon quantum tips
dc.contributor.author | Zheng, W. H. | en_US |
dc.contributor.author | Xia, Jian-bai | en_US |
dc.contributor.author | Lam, S. D. | en_US |
dc.contributor.author | Cheah, K. W. | en_US |
dc.contributor.author | Rakhshandehroo, M. R. | en_US |
dc.contributor.author | Pang, S. W. | en_US |
dc.date.accessioned | 2010-05-06T23:12:24Z | |
dc.date.available | 2010-05-06T23:12:24Z | |
dc.date.issued | 1999-01-18 | en_US |
dc.identifier.citation | Zheng, W. H.; Xia, Jian-bai; Lam, S. D.; Cheah, K. W.; Rakhshandehroo, M. R.; Pang, S. W. (1999). "Ultraviolet emission of silicon quantum tips." Applied Physics Letters 74(3): 386-388. <http://hdl.handle.net/2027.42/71101> | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/71101 | |
dc.description.abstract | Silicon tips used as field emitters have dimensions that are within the quantum confinement regime. Therefore they can be considered as freestanding silicon tips. In this letter, a photoluminescence spectrum of a 100×100100×100 array of silicon tips was taken at 10 K. Narrow ultraviolet luminescence peaks were observed. Using the empirical pseudopotential homojunction model, it is demonstrated that these luminescence peaks come from energy levels arising from quantum confinement. By fitting the theoretical result to the experimental result, we conclude that the luminescence peaks come from Si quantum tips of about 20 Å in width and that they are covered by silicon dioxide. © 1999 American Institute of Physics. | en_US |
dc.format.extent | 3102 bytes | |
dc.format.extent | 163855 bytes | |
dc.format.mimetype | text/plain | |
dc.format.mimetype | application/pdf | |
dc.publisher | The American Institute of Physics | en_US |
dc.rights | © The American Institute of Physics | en_US |
dc.title | Ultraviolet emission of silicon quantum tips | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109-2122 | en_US |
dc.contributor.affiliationother | Department of Physics, Hong Kong Baptist University, Kowloon Tong, Hong Kong, People’s Republic of China | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/71101/2/APPLAB-74-3-386-1.pdf | |
dc.identifier.doi | 10.1063/1.123079 | en_US |
dc.identifier.source | Applied Physics Letters | en_US |
dc.identifier.citedreference | L. T. Canham, Appl. Phys. Lett. APPLAB57, 1046 (1990). | en_US |
dc.identifier.citedreference | See, for example, Mater. Res. Soc. Symp. Proc. 256 (1992); 283 (1993); 358 (1995); 452 (1997). | en_US |
dc.identifier.citedreference | K. Kim, Phys. Rev. B PRBMDO57, 13072 (1998). | en_US |
dc.identifier.citedreference | M. Rakhshandehroo and S. W. Pang, J. Vac. Sci. Technol. B JVTBD914, 3697 (1996). | en_US |
dc.identifier.citedreference | M. R. Rakhshandehroo and S. W. Pang, J. Vac. Sci. Technol. B JVTBD915, 2777 (1997). | en_US |
dc.identifier.citedreference | J. B. Xia and K. W. Cheah, Phys. Rev. B PRBMDO55, 15688 (1997). | en_US |
dc.identifier.citedreference | P. Balk, The Si–SiO2Si–SiO2 System (Elsevier, Amsterdam, 1988). | en_US |
dc.identifier.citedreference | S. L. Zhang, K. S. Ho, Y. T. Hou, B. D. Qian, P. Diao, and S. M. Cai, Appl. Phys. Lett. APPLAB62, 642 (1993). | en_US |
dc.identifier.citedreference | X. Wang, D. M. Huang, L. Ye, M. Yang, P. H. Hao, H. X. Fu, X. Y. Hou, and X. D. Xie, Phys. Rev. Lett. PRLTAO71, 1265 (1993). | en_US |
dc.identifier.citedreference | H. Benisty, C. M. Sotomayor-Torres, and C. Weisbuch, Phys. Rev. B PRBMDO44, 10945 (1991). | en_US |
dc.identifier.citedreference | H. Sakaki, Jpn. J. Appl. Phys., Part 2 JAPLD819, L735 (1980). | en_US |
dc.owningcollname | Physics, Department of |
Files in this item
Remediation of Harmful Language
The University of Michigan Library aims to describe library materials in a way that respects the people and communities who create, use, and are represented in our collections. Report harmful or offensive language in catalog records, finding aids, or elsewhere in our collections anonymously through our metadata feedback form. More information at Remediation of Harmful Language.
Accessibility
If you are unable to use this file in its current format, please select the Contact Us link and we can modify it to make it more accessible to you.