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Epitaxial growth and dielectric properties of homologous Srm−3Bi4TimO3m+3Srm−3Bi4TimO3m+3 (m = 3,4,5,6)(m=3,4,5,6) thin films

dc.contributor.authorZhang, S. T.en_US
dc.contributor.authorChen, Y. F.en_US
dc.contributor.authorSun, H. P.en_US
dc.contributor.authorPan, Xiaoqingen_US
dc.contributor.authorLiu, Zhi-Guoen_US
dc.contributor.authorMing, N. B.en_US
dc.date.accessioned2010-05-06T23:21:10Z
dc.date.available2010-05-06T23:21:10Z
dc.date.issued2002-12-23en_US
dc.identifier.citationZhang, S. T.; Chen, Y. F.; Sun, H. P.; Pan, X. Q.; Liu, Z. G.; Ming, N. B. (2002). "Epitaxial growth and dielectric properties of homologous Srm−3Bi4TimO3m+3Srm−3Bi4TimO3m+3 (m = 3,4,5,6)(m=3,4,5,6) thin films." Applied Physics Letters 81(26): 5009-5011. <http://hdl.handle.net/2027.42/71193>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/71193
dc.description.abstractThe first four members of Bi-layered Srm−3Bi4TimO3m+3Srm−3Bi4TimO3m+3 homologous series with m = 3,m=3, 4, 5, and 6, i.e., Bi4Ti3O12,Bi4Ti3O12, SrBi4Ti4O15,SrBi4Ti4O15, Sr2Bi4Ti5O18,Sr2Bi4Ti5O18, and Sr3Bi4Ti6O21,Sr3Bi4Ti6O21, were grown on SrTiO3SrTiO3 (001) single-crystal substrates by pulsed-laser deposition. X-ray diffraction and high-resolution transmission electron microscopy (HRTEM) reveal that the films grew epitaxially with in-plane epitaxial alignment of [10]Srm−3Bi4TimO3m+3‖[010]SrTiO3.[11̄0]Srm−3Bi4TimO3m+3‖[010]SrTiO3. HRTEM cross-sectional images show that the films with m = 3,m=3, 4, and 5 are nearly free of intergrowth, whereas a number of growth defects were observed in the film with m = 6.m=6. Using an evanescent microwave probe, the room-temperature dielectric constants of these epitaxial films are measured to be 221±13,221±13, 205±15,205±15, 261±29,261±29, and 249±17249±17 for films with m = 3,m=3, 4, 5, and 6, respectively. © 2002 American Institute of Physics.en_US
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dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleEpitaxial growth and dielectric properties of homologous Srm−3Bi4TimO3m+3Srm−3Bi4TimO3m+3 (m = 3,4,5,6)(m=3,4,5,6) thin filmsen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Materials Science and Engineering, The University of Michigan, Ann Arbor, Michigan 48109-2136en_US
dc.contributor.affiliationotherDepartment of Materials Science and Engineering and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, People’s Republic of Chinaen_US
dc.contributor.affiliationotherDepartment of Materials Science and Engineering and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, People’s Republic of Chinaen_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/71193/2/APPLAB-81-26-5009-1.pdf
dc.identifier.doi10.1063/1.1530741en_US
dc.identifier.sourceApplied Physics Lettersen_US
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