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Effect of hydrogen on surface roughening during Si homoepitaxial growth

dc.contributor.authorAdams, David P.en_US
dc.contributor.authorYalisove, Steven M.en_US
dc.contributor.authorEaglesham, D. J.en_US
dc.date.accessioned2010-05-06T23:23:05Z
dc.date.available2010-05-06T23:23:05Z
dc.date.issued1993-12-27en_US
dc.identifier.citationAdams, D. P.; Yalisove, S. M.; Eaglesham, D. J. (1993). "Effect of hydrogen on surface roughening during Si homoepitaxial growth." Applied Physics Letters 63(26): 3571-3573. <http://hdl.handle.net/2027.42/71213>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/71213
dc.description.abstractHydrogen is shown to have a strong influence on the evolution of surface morphology during low temperature (310 °C) Si(100) homoepitaxy. Molecular beam epitaxy growth in the presence of deuterium shows a surface roughness within the epitaxial film that increases rapidly until the Si film exhibits a crystalline to amorphous transition. The rate at which the surface roughens depends critically on the partial pressure of deuterium. Although the kinetics of growth are sensitive to small pressures (4×10−8 Torr) of D, it appears that the breakdown of epitaxy does not result from a ‘‘critical’’ D concentration at the surface. This work suggests that the crystalline to amorphous transition, instead, results from increased roughening during epitaxy.en_US
dc.format.extent3102 bytes
dc.format.extent618548 bytes
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleEffect of hydrogen on surface roughening during Si homoepitaxial growthen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109‐2136en_US
dc.contributor.affiliationotherAT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/71213/2/APPLAB-63-26-3571-1.pdf
dc.identifier.doi10.1063/1.110100en_US
dc.identifier.sourceApplied Physics Lettersen_US
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dc.owningcollnamePhysics, Department of


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