Matrix-seeded growth of nitride semiconductor nanostructures using ion beams
dc.contributor.author | Weng, X. | en_US |
dc.contributor.author | Ye, W. | en_US |
dc.contributor.author | Clarke, S. J. | en_US |
dc.contributor.author | Goldman, R. S. | en_US |
dc.contributor.author | Rotberg, V. H. (Victor H.) | en_US |
dc.contributor.author | Daniel, A. V. | en_US |
dc.contributor.author | Clarke, Roy | en_US |
dc.date.accessioned | 2011-11-15T16:05:16Z | |
dc.date.available | 2011-11-15T16:05:16Z | |
dc.date.issued | 2005-03-15 | en_US |
dc.identifier.citation | Weng, X.; Ye, W.; Clarke, S. J.; Goldman, R. S.; Rotberg, V.; Daniel, A.; Clarke, R. (2005). "Matrix-seeded growth of nitride semiconductor nanostructures using ion beams." Journal of Applied Physics 97(6): 064301-064301-7. <http://hdl.handle.net/2027.42/87633> | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/87633 | |
dc.description.abstract | We have examined the matrix-seeded growth of narrow-gap nitride nanostructures in nitrogen ion implanted GaAs and InAs. Low-energy implantation followed by rapid thermal annealing (RTA) results in the formation of 2–3 nm sized amorphous precipitates in a crystalline matrix. On the other hand, high-energy implantation results in an amorphous layer, with or without crystalline remnants. When the ion-beam-synthesized amorphous matrix is a continuous amorphous layer, subsequent RTA leads to the formation of 4–5 nm zinc blende (ZB)-GaN-rich crystallites in an amorphous matrix. When this matrix contains crystalline remnants, subsequent RTA leads to the formation of 2–4 nm ZB-GaN-rich crystallites within the amorphous regions. These results suggest that the matrix plays an important role in the nucleation and growth of narrow-gap nitride nanostructures, and that matrix-seeded growth may provide an opportunity to control the structure and properties of the nanostructures. | en_US |
dc.publisher | The American Institute of Physics | en_US |
dc.rights | © The American Institute of Physics | en_US |
dc.title | Matrix-seeded growth of nitride semiconductor nanostructures using ion beams | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 | en_US |
dc.contributor.affiliationum | Department of Nuclear Engineering and Radiological Sciences, University of Michigan, Ann Arbor, Michigan 48109 | en_US |
dc.contributor.affiliationum | Applied Physics Program, University of Michigan, Ann Arbor, Michigan 48109 | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/87633/2/064301_1.pdf | |
dc.identifier.doi | 10.1063/1.1847726 | en_US |
dc.identifier.source | Journal of Applied Physics | en_US |
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