ZnO thin-film transistors with polycrystalline (Ba,Sr)TiO3(Ba,Sr)TiO3 gate insulators

Abstract

The electrical characteristics of ZnO thin-film transistors with high-kk (Ba,Sr)TiO3(Ba,Sr)TiO3 gate dielectrics are presented. The ZnO and (Ba,Sr)TiO3(Ba,Sr)TiO3 thin films were deposited on Pt, exhibiting polycrystalline characteristics. The thin-film devices demonstrated transistor behavior over the range of 0–10 V0–10V with a stable threshold voltage of approximately 1.2 V1.2V. The field effect mobility, subthreshold slope, and on/off ratio were measured to be 2.3 cm2 V−1 s−12.3cm2V−1s−1, 0.25 V/decade0.25V∕decade, and 1.5×1081.5×108, respectively. The measured transistor performance characteristics suggest that ZnO/(Ba,Sr)TiO3ZnO∕(Ba,Sr)TiO3 structures are well suited for both polycrystalline thin-film transistors for display applications and future higher performance transistors based on single crystal ZnO.