Vertically aligned tin-doped indium oxide nanowire arrays: Epitaxial growth and electron field emission properties

Wan, Q.; Feng, P.; Wang, T. H.

Vertically aligned tin-doped indium oxide nanowire arrays: Epitaxial growth and electron field emission properties

dc.contributor.author	Wan, Q.	en_US
dc.contributor.author	Feng, P.	en_US
dc.contributor.author	Wang, T. H.	en_US
dc.date.accessioned	2011-11-15T16:08:48Z
dc.date.available	2011-11-15T16:08:48Z
dc.date.issued	2006-09-18	en_US
dc.identifier.citation	Wan, Q.; Feng, P.; Wang, T. H. (2006). "Vertically aligned tin-doped indium oxide nanowire arrays: Epitaxial growth and electron field emission properties." Applied Physics Letters 89(12): 123102-123102-3. <http://hdl.handle.net/2027.42/87793>	en_US
dc.identifier.uri	https://hdl.handle.net/2027.42/87793
dc.description.abstract	Vertically aligned tin-doped indium oxide (ITO) single-crystalline nanowire arrays are epitaxially grown on ITO/yttrium stabilized zirconia substrates by vapor transport method. Vacuum electron field emission properties of the aligned ITO nanowires are investigated. The turn-on electrical field at a current density of 1 μA/cm21μA∕cm2 is about 2.0 V/μm2.0V∕μm, and the lowest vacuum for an obvious emission is 1×10−1 Pa1×10−1Pa. The good performance of field emission is attributed to the vertically aligned morphology, which has a stronger local electric field due to their orientation parallel to the electric-field direction.	en_US
dc.publisher	The American Institute of Physics	en_US
dc.rights	© The American Institute of Physics	en_US
dc.title	Vertically aligned tin-doped indium oxide nanowire arrays: Epitaxial growth and electron field emission properties	en_US
dc.type	Article	en_US
dc.subject.hlbsecondlevel	Physics	en_US
dc.subject.hlbtoplevel	Science	en_US
dc.description.peerreviewed	Peer Reviewed	en_US
dc.contributor.affiliationum	Micro-Nano Technologies Research Center, Hunan University, Changsha 410082, People’s Republic of China and Department of Electrical Engineering and Computer Science, The University of Michigan, 1301 Beal Avenue, Ann Arbor, Michigan 48109-2122	en_US
dc.contributor.affiliationother	Micro-Nano Technologies Research Center, Hunan University, Changsha 410082, People’s Republic of China	en_US
dc.description.bitstreamurl	http://deepblue.lib.umich.edu/bitstream/2027.42/87793/2/123102_1.pdf
dc.identifier.doi	10.1063/1.2345278	en_US
dc.identifier.source	Applied Physics Letters	en_US
dc.identifier.citedreference	N. Taga, H. Odaka, Y. Shigesato, I. Yasui, M. Kamei, and T. E. Haynes, J. Appl. Phys. 80, 978 (1996).	en_US
dc.identifier.citedreference	Q. Wan, Z. T. Zong, S. L. Feng, and T. H. Wang, Appl. Phys. Lett. 85, 4759 (2004).	en_US
dc.identifier.citedreference	S. Y. Li, C. Y. Lee, P. Lin, and T. Y. Tseng, Nanotechnology 16, 451 (2005).	en_US
dc.identifier.citedreference	Y. Q. Chen, J. Jiang, B. Wang, and J. G. Hou, J. Phys. D 37, 3319 (2004).	en_US
dc.identifier.citedreference	Q. Wan, M. Wei, D. Zhi, J. L. MacManus-Driscoll, and M. G. Blamire, Adv. Mater. (Weinheim, Ger.) 18, 234 (2006).	en_US
dc.identifier.citedreference	Q. Wan, K. Yu, T. H. Wang, and C. L. Lin, Appl. Phys. Lett. 83, 2253 (2003).	en_US
dc.identifier.citedreference	Q. H. Li, Q. Wan, Y. J. Chen, T. H. Wang, H. B. Jia, and D. P. Yu, Appl. Phys. Lett. 85, 636 (2004).	en_US
dc.identifier.citedreference	L. F. Dong, J. Jiao, D. W. Tuggle, J. M. Petty, S. A. Elliff, and M. Coulter, Appl. Phys. Lett. 82, 1096 (2003).	en_US
dc.identifier.citedreference	C. J. Lee, T. J. Lee, S. C. Lyu, Y. Zhang, H. Ruh, and H. J. Lee, Appl. Phys. Lett. 81, 3648 (2002).	en_US
dc.identifier.citedreference	Y. W. Zhu, H. Z. Zhang, X. C. Sun, S. Q. Feng, J. Xu, Q. Zhao, B. Xiang, R. M. Wang, and D. P. Yu, Appl. Phys. Lett. 83, 144 (2003).	en_US
dc.identifier.citedreference	C. X. Xu and X. W. Sun, Appl. Phys. Lett. 83, 3806 (2003).	en_US
dc.identifier.citedreference	J. Zhou, S. Z. Deng, N. S. Xu, J. Chen, and J. C. She, Appl. Phys. Lett. 83, 2653 (2003).	en_US
dc.identifier.citedreference	Y. B. Li, Y. Bando, D. Golberg, and K. Kurashima, Appl. Phys. Lett. 81, 5048 (2002).	en_US
dc.identifier.citedreference	R. S. Chen, Y. S. Huang, Y. M. Liang, C. S. Hsieh, D. S. Tsai, and K. K. Tiong, Appl. Phys. Lett. 84, 1552 (2004).	en_US
dc.identifier.citedreference	C. S. Hsieh, D. S. Tsai, R. S. Chen, and Y. S. Huang, Appl. Phys. Lett. 85, 3860 (2004).	en_US
dc.identifier.citedreference	Chien-Te Hsieh, Jin-Ming Chen, Hung-Hsiao Lin, and Han-Chang Shih, Appl. Phys. Lett. 83, 3383 (2003).	en_US
dc.identifier.citedreference	J. Chen, S. Z. Deng, N. S. Xu, W. Zhang, X. Wen, and S. Yang, Appl. Phys. Lett. 83, 746 (2003).	en_US
dc.identifier.citedreference	S. Q. Li, Y. X. Liang, and T. H. Wang, Appl. Phys. Lett. 87, 43104 (2005).	en_US
dc.identifier.citedreference	R. S. Wagner and W. C. Ellis, Appl. Phys. Lett. 4, 89 (1964).	en_US
dc.identifier.citedreference	R. H. Fowler and L. W. Nordheim, Proc. R. Soc. London, Ser. A 119, 173 (1928).	en_US
dc.owningcollname	Physics, Department of

Files in this item

Name:: 123102_1.pdf
Size:: 293.6KB
Format:: PDF

View/Open

Show simple item record

Remediation of Harmful Language

The University of Michigan Library aims to describe library materials in a way that respects the people and communities who create, use, and are represented in our collections. Report harmful or offensive language in catalog records, finding aids, or elsewhere in our collections anonymously through our metadata feedback form. More information at Remediation of Harmful Language.

Accessibility

If you are unable to use this file in its current format, please select the Contact Us link and we can modify it to make it more accessible to you.