Mechanisms for current-induced conductivity changes in a conducting polymer
dc.contributor.author | Xu, Xin | en_US |
dc.contributor.author | Register, Richard A. | en_US |
dc.contributor.author | Forrest, Stephen R. | en_US |
dc.date.accessioned | 2011-11-15T16:08:51Z | |
dc.date.available | 2011-11-15T16:08:51Z | |
dc.date.issued | 2006-10-02 | en_US |
dc.identifier.citation | Xu, Xin; Register, Richard A.; Forrest, Stephen R. (2006). "Mechanisms for current-induced conductivity changes in a conducting polymer." Applied Physics Letters 89(14): 142109-142109-3. <http://hdl.handle.net/2027.42/87796> | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/87796 | |
dc.description.abstract | A layer of polyethylene dioxythiophene:polystyrene sulfonic acid (PEDT:PSS) spun onto the surface of an inorganic semiconductor forms a highly asymmetric rectifying junction when a small current is applied and can be permanently open circuited with application of a high current density. This allows the polymer/semiconductor junction to function as a write-once-read-many-times memory element. We use x-ray photoelectron spectroscopy and temperature induced conductivity measurements to study the morphological and chemical changes responsible for the large current-induced conductivity changes. It is found that by applying a large current to the organic-inorganic semiconductor rectifying heterojunction structure Au/PEDT:PSS/SiAu∕PEDT:PSS∕Si, the ratio of PEDT+PEDT+ to PSS−PSS− near the interface changes due to phase segregation in the presence of both high electric field (>105 V/cm)(>105V∕cm) and temperature. This leads to a decrease in film conductivity by up to six orders of magnitude from its value in the conductive state. | en_US |
dc.publisher | The American Institute of Physics | en_US |
dc.rights | © The American Institute of Physics | en_US |
dc.title | Mechanisms for current-induced conductivity changes in a conducting polymer | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109 and Department of Physics, University of Michigan, Ann Arbor, Michigan 48109 | en_US |
dc.contributor.affiliationother | Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544 | en_US |
dc.contributor.affiliationother | Department of Chemical Engineering, Princeton University, Princeton, New Jersey 08544 | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/87796/2/142109_1.pdf | |
dc.identifier.doi | 10.1063/1.2358309 | en_US |
dc.identifier.source | Applied Physics Letters | en_US |
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dc.owningcollname | Physics, Department of |
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