Show simple item record

Mechanisms for current-induced conductivity changes in a conducting polymer

dc.contributor.authorXu, Xinen_US
dc.contributor.authorRegister, Richard A.en_US
dc.contributor.authorForrest, Stephen R.en_US
dc.date.accessioned2011-11-15T16:08:51Z
dc.date.available2011-11-15T16:08:51Z
dc.date.issued2006-10-02en_US
dc.identifier.citationXu, Xin; Register, Richard A.; Forrest, Stephen R. (2006). "Mechanisms for current-induced conductivity changes in a conducting polymer." Applied Physics Letters 89(14): 142109-142109-3. <http://hdl.handle.net/2027.42/87796>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/87796
dc.description.abstractA layer of polyethylene dioxythiophene:polystyrene sulfonic acid (PEDT:PSS) spun onto the surface of an inorganic semiconductor forms a highly asymmetric rectifying junction when a small current is applied and can be permanently open circuited with application of a high current density. This allows the polymer/semiconductor junction to function as a write-once-read-many-times memory element. We use x-ray photoelectron spectroscopy and temperature induced conductivity measurements to study the morphological and chemical changes responsible for the large current-induced conductivity changes. It is found that by applying a large current to the organic-inorganic semiconductor rectifying heterojunction structure Au/PEDT:PSS/SiAu∕PEDT:PSS∕Si, the ratio of PEDT+PEDT+ to PSS−PSS− near the interface changes due to phase segregation in the presence of both high electric field (>105 V/cm)(>105V∕cm) and temperature. This leads to a decrease in film conductivity by up to six orders of magnitude from its value in the conductive state.en_US
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleMechanisms for current-induced conductivity changes in a conducting polymeren_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109 and Department of Physics, University of Michigan, Ann Arbor, Michigan 48109en_US
dc.contributor.affiliationotherDepartment of Electrical Engineering, Princeton University, Princeton, New Jersey 08544en_US
dc.contributor.affiliationotherDepartment of Chemical Engineering, Princeton University, Princeton, New Jersey 08544en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/87796/2/142109_1.pdf
dc.identifier.doi10.1063/1.2358309en_US
dc.identifier.sourceApplied Physics Lettersen_US
dc.identifier.citedreferenceS. R. Forrest, Nature (London) 428, 911 (2004).en_US
dc.identifier.citedreferenceS. Möller, C. Perlov, W. Jackson, C. Taussig, and S. R. Forrest, Nature (London) 426, 166 (2003).en_US
dc.identifier.citedreferenceS. Möller, S. R. Forrest, C. Perlov, W. Jackson, and C. Taussig, J. Appl. Phys. 94, 7811 (2003).en_US
dc.identifier.citedreferenceS. Smith and S. R. Forrest, Appl. Phys. Lett. 84, 5019 (2004).en_US
dc.identifier.citedreferenceP. Baytron and H. C. Starck, Bayer Corp., Frankfurt, Germany.en_US
dc.identifier.citedreferenceQ. D. Ling, Y. Song, S. J. Ding, C. Zhu, D. S. H. Chan, D.-L. Kwong, E.-T. Kang, and K.-G. Neoh, Adv. Mater. (Weinheim, Ger.) 17, 455 (2005).en_US
dc.identifier.citedreferenceY. Song, Q. D. Ling, C. Zhu, E. T. Kang, D. S. H. Chan, Y. H. Wang, and D.-L. Kwong, IEEE Electron Device Lett. 27, 154 (2006).en_US
dc.identifier.citedreferenceG. Greczynski, T. Kugler, and W. R. Salaneck, Thin Solid Films 354, 129 (1999).en_US
dc.identifier.citedreferenceG. Greczynski, T. Kugler, M. Keil, W. Osikowicz, M. Fahlman, and W. R. Salaneck, J. Electron Spectrosc. Relat. Phenom. 121, 1 (2001).en_US
dc.identifier.citedreferenceX. Crispin, S. Marciniak, W. Osikowicz, G. Zotti, A. W. Denier van der Gon, F. Louwet, M. Fahlman, L. Groenendaal, F. De Schryver, and W. R. Salaneck, J. Polym. Sci., Part B: Polym. Phys. 41, 2561 (2003).en_US
dc.identifier.citedreferenceS. J. Martin, R. A. L. Jones, M. Geoghegan, A. M. Higgins, I. Grizzi, J. J. M. Halls, S. Kirchmeyer, and R. M. Dalgleish, Phys. Rev. B 71, 081308 (2005).en_US
dc.owningcollnamePhysics, Department of


Files in this item

Show simple item record

Remediation of Harmful Language

The University of Michigan Library aims to describe library materials in a way that respects the people and communities who create, use, and are represented in our collections. Report harmful or offensive language in catalog records, finding aids, or elsewhere in our collections anonymously through our metadata feedback form. More information at Remediation of Harmful Language.

Accessibility

If you are unable to use this file in its current format, please select the Contact Us link and we can modify it to make it more accessible to you.