Growth and characteristics of ultralow threshold 1.45 μm1.45μm metamorphic InAs tunnel injection quantum dot lasers on GaAs

Abstract

The molecular beam epitaxial growth and characteristics of 1.45 μm1.45μm metamorphic InAs quantum dot tunnel injection lasers on GaAs have been studied. Under optimized growth conditions, the quantum dots exhibit photoluminescence linewidths ∼ 30 meV∼30meV and high intensity at room temperature. The lasers are characterized by ultralow threshold current (63 A/cm2)(63A∕cm2), large frequency response (f−3 dB = 8 GHz)(f−3dB=8GHz), and near-zero αα parameter and chirp.