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Single domain strain relaxed PrScO3PrScO3 template on miscut substrates

dc.contributor.authorFolkman, Chad M.en_US
dc.contributor.authorDas, R. R.en_US
dc.contributor.authorEom, Chang-Beomen_US
dc.contributor.authorChen, Y. B.en_US
dc.contributor.authorPan, Xiaoqingen_US
dc.date.accessioned2011-11-15T16:09:07Z
dc.date.available2011-11-15T16:09:07Z
dc.date.issued2006-11-27en_US
dc.identifier.citationFolkman, C. M.; Das, R. R.; Eom, C. B.; Chen, Y. B.; Pan, X. Q. (2006). "Single domain strain relaxed PrScO3PrScO3 template on miscut substrates." Applied Physics Letters 89(22): 221904-221904-3. <http://hdl.handle.net/2027.42/87808>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/87808
dc.description.abstractThe authors have grown strain relaxed epitaxial template of a rare-earth scandate, PrScO3PrScO3, on miscut (001) SrTiO3SrTiO3 and (001) (LaAlO3)0.3–(Sr2AlTaO3)0.7(LaAlO3)0.3–(Sr2AlTaO3)0.7 substrates by pulsed laser deposition of PrScO3PrScO3 buffer layers followed by postannealing and overlayer growth. X-ray diffraction exhibits that the PrScO3PrScO3 is a single domain with bulk lattice parameters and the out-of-plane crystalline quality is comparable with SrTiO3SrTiO3 single crystals. Cross-sectional transmission electron microscopy micrographs show dislocation-free overlayers containing boundaries with very small in-plane misalignment. The growth of strain relaxed rare-earth scandate templates with controlled lattice parameters offers strain and domain engineering of epitaxial multifunctional oxide thin films.en_US
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleSingle domain strain relaxed PrScO3PrScO3 template on miscut substratesen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109en_US
dc.contributor.affiliationotherDepartment of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/87808/2/221904_1.pdf
dc.identifier.doi10.1063/1.2396920en_US
dc.identifier.sourceApplied Physics Lettersen_US
dc.identifier.citedreferenceJ. Schubert, O. Trithaveesak, A. Petraru, C. L. Jia, R. Uecker, P. Reiche, and D. G. Schlom, Appl. Phys. Lett. 82, 3460 (2003).en_US
dc.identifier.citedreferenceK. J. Choi, M. Biegalski, Y. L. Li, A. Sharan, J. Schubert, R. Uecker, P. Reiche, Y. B. Chen, X. Q. Pan, V. Goplan, L.-Q. Chen, D. G. Schlom, and C. B. Eom, Science 306, 1005 (2004).en_US
dc.identifier.citedreferenceM. D. Biegalski, J. H. Haeni, S. Tolier-Mckinstry, D. G. Schlom, C. D. Brandle, and A. J. Ven Graitis, J. Mater. Res. 20, 952 (2005).en_US
dc.identifier.citedreferenceJ. Wang and T. Y. Zhang, Appl. Phys. Lett. 86, 192905 (2005).en_US
dc.identifier.citedreferenceK. Terai, M. Lippmaa, P. Ahmet, T. Chikyow, H. Koinuma, M. Ohtani, and M. Kawasaki, Appl. Surf. Sci. 223, 183 (2004).en_US
dc.identifier.citedreferenceH. M. Christen, G. E. Jellison, Jr., I. Ohkubo, S. Huang, M. E. Reeves, E. Cicerrella, J. L. Freeouf, Y. Jia, and D. G. Schlom, Appl. Phys. Lett. 88, 262906 (2006).en_US
dc.identifier.citedreferenceG. Koster, B. L. Kropman, G. J. H. M. Rijnders, D. H. A. Blank, and H. Rogalla, Appl. Phys. Lett. 73, 2920 (1998).en_US
dc.identifier.citedreferenceE. Talik, M. Kruczek, H. Sakowska, and W. Szyrshi, J. Alloys Compd. 361, 282 (2003).en_US
dc.identifier.citedreferenceC. B. Eom, R. J. Cava, R. M. Fleming, Julia M. Phillips, R. B. van Dover, J. H. Marshall, J. W. P. Hsu, J. J. Krajewski, and W. F. Peck, Jr., Science 258, 1766 (1992).en_US
dc.identifier.citedreferenceH. P. Sun, X. Q. Pan, J. H. Haeni, and D. G. Schlom, Appl. Phys. Lett. 85, 1967 (2004).en_US
dc.identifier.citedreferenceH. P. Sun, W. Tian, X. Q. Pan, J. H. Haeni, and D. G. Schlom, Appl. Phys. Lett. 84, 3298 (2004).en_US
dc.identifier.citedreferenceJ. W. Matthews, Epitaxial Growth, Part B, Edited by: J. W. Matthews, (Academic, New York, 1975), p. 556.en_US
dc.owningcollnamePhysics, Department of


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