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Hexagonal close-packed Ni nanostructures grown on the (001) surface of MgO

dc.contributor.authorTian, Weien_US
dc.contributor.authorSun, H. P.en_US
dc.contributor.authorPan, Xiaoqingen_US
dc.contributor.authorYu, J. H.en_US
dc.contributor.authorYeadon, M.en_US
dc.contributor.authorBoothroyd, C. B.en_US
dc.contributor.authorFeng, Y. P.en_US
dc.contributor.authorLukaszew, Rosa A.en_US
dc.contributor.authorClarke, Royen_US
dc.date.accessioned2011-11-15T16:09:54Z
dc.date.available2011-11-15T16:09:54Z
dc.date.issued2005-03-28en_US
dc.identifier.citationTian, W.; Sun, H. P.; Pan, X. Q.; Yu, J. H.; Yeadon, M.; Boothroyd, C. B.; Feng, Y. P.; Lukaszew, R. A.; Clarke, R. (2005). "Hexagonal close-packed Ni nanostructures grown on the (001) surface of MgO." Applied Physics Letters 86(13): 131915-131915-3. <http://hdl.handle.net/2027.42/87846>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/87846
dc.description.abstractWe report the in situ microscopy observation of an unnatural phase of Ni, a highly strained hexagonal close-packed (hcp) form which we believe is stabilized by heteroepitaxial growth on the (001) face of MgO. We find that the nanosized hcp nickel islands transform into the normal face-centered cubic structure when the size of the islands exceeds a critical value (about 2.5 nm thick with a lateral size of ∼ 5 nm∼5nm). The structural transition proceeds via a martensitic change in the stacking sequence of the close-packed planes. The formation of hcp Ni nanostructures with an unusually large crystallographic c/ac∕a ratio ( ∼ 6%∼6% larger than ideal hcp) is very interesting for spintronic and recording applications where large uniaxial anisotropies are desirable.en_US
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleHexagonal close-packed Ni nanostructures grown on the (001) surface of MgOen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-1236en_US
dc.contributor.affiliationumDepartment of Physics, University of Michigan, Ann Arbor, Michigan 48109-1120en_US
dc.contributor.affiliationotherInstitute of Materials Research and Engineering, 3 Research Link, Singapore 117602, Singaporeen_US
dc.contributor.affiliationotherDepartment of Physics, National University of Singapore, Singapore 119260, Singaporeen_US
dc.contributor.affiliationotherDepartment of Physics and Astronomy, University of Toledo, Toledo, Ohio 43606en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/87846/2/131915_1.pdf
dc.identifier.doi10.1063/1.1890472en_US
dc.identifier.sourceApplied Physics Lettersen_US
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dc.owningcollnamePhysics, Department of


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