JavaScript is disabled for your browser. Some features of this site may not work without it.
Formation and evolution of epitaxial Co5Ge7Co5Ge7 on Ge(001)Ge(001) surface by reactive deposition inside an ultrahigh-vacuum transmission electron microscope
Sun, H. P.; Chen, Y. B.; Pan, X. Q.; Chi, D. Z.; Nath, R.; Foo, Y. L.
2005-02-14
Citation:Sun, H. P.; Chen, Y. B.; Pan, X. Q.; Chi, D. Z.; Nath, R.; Foo, Y. L. (2005). "Formation and evolution of epitaxial Co5Ge7Co5Ge7 on Ge(001)Ge(001) surface by reactive deposition inside an ultrahigh-vacuum transmission electron microscope." Applied Physics Letters 86(7): 071904-071904-3.
Abstract: Cobalt was deposited on single-crystal Ge(001)Ge(001) surface at ∼ 350 °C∼350°C by electron-beam evaporation in an ultrahigh-vacuum transmission electron microscope. The deposited CoCo reacts with GeGe to form nanosized islands with the cobalt germanide Co5Ge7Co5Ge7 phase. The Co5Ge7Co5Ge7 islands show square and rectangular shapes. Two epitaxial orientation relationships between Co5Ge7Co5Ge7 and GeGe were observed: Co5Ge7Co5Ge7 〈110〉(001)∥Ge〈100〉(001)〈110〉(001)∥Ge〈100〉(001) and Co5Ge7〈001〉(110)∥Ge〈100〉(001)Co5Ge7〈001〉(110)∥Ge〈100〉(001).
