Formation and evolution of epitaxial Co5Ge7Co5Ge7 on Ge(001)Ge(001) surface by reactive deposition inside an ultrahigh-vacuum transmission electron microscope

Sun, H. P.; Chen, Y. B.; Pan, Xiaoqing; Chi, D. Z.; Nath, R.; Foo, Y. L.

Formation and evolution of epitaxial Co5Ge7Co5Ge7 on Ge(001)Ge(001) surface by reactive deposition inside an ultrahigh-vacuum transmission electron microscope

dc.contributor.author	Sun, H. P.	en_US
dc.contributor.author	Chen, Y. B.	en_US
dc.contributor.author	Pan, Xiaoqing	en_US
dc.contributor.author	Chi, D. Z.	en_US
dc.contributor.author	Nath, R.	en_US
dc.contributor.author	Foo, Y. L.	en_US
dc.date.accessioned	2011-11-15T16:10:01Z
dc.date.available	2011-11-15T16:10:01Z
dc.date.issued	2005-02-14	en_US
dc.identifier.citation	Sun, H. P.; Chen, Y. B.; Pan, X. Q.; Chi, D. Z.; Nath, R.; Foo, Y. L. (2005). "Formation and evolution of epitaxial Co5Ge7Co5Ge7 on Ge(001)Ge(001) surface by reactive deposition inside an ultrahigh-vacuum transmission electron microscope." Applied Physics Letters 86(7): 071904-071904-3. <http://hdl.handle.net/2027.42/87852>	en_US
dc.identifier.uri	https://hdl.handle.net/2027.42/87852
dc.description.abstract	Cobalt was deposited on single-crystal Ge(001)Ge(001) surface at ∼ 350 °C∼350°C by electron-beam evaporation in an ultrahigh-vacuum transmission electron microscope. The deposited CoCo reacts with GeGe to form nanosized islands with the cobalt germanide Co5Ge7Co5Ge7 phase. The Co5Ge7Co5Ge7 islands show square and rectangular shapes. Two epitaxial orientation relationships between Co5Ge7Co5Ge7 and GeGe were observed: Co5Ge7Co5Ge7 ⟨110⟩(001)∥Ge⟨100⟩(001)⟨110⟩(001)∥Ge⟨100⟩(001) and Co5Ge7⟨001⟩(110)∥Ge⟨100⟩(001)Co5Ge7⟨001⟩(110)∥Ge⟨100⟩(001).	en_US
dc.publisher	The American Institute of Physics	en_US
dc.rights	© The American Institute of Physics	en_US
dc.title	Formation and evolution of epitaxial Co5Ge7Co5Ge7 on Ge(001)Ge(001) surface by reactive deposition inside an ultrahigh-vacuum transmission electron microscope	en_US
dc.type	Article	en_US
dc.subject.hlbsecondlevel	Physics	en_US
dc.subject.hlbtoplevel	Science	en_US
dc.description.peerreviewed	Peer Reviewed	en_US
dc.contributor.affiliationum	Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109	en_US
dc.contributor.affiliationother	Institute of Materials Research and Engineering, 3 Research Link, Singapore117602, Singapore	en_US
dc.description.bitstreamurl	http://deepblue.lib.umich.edu/bitstream/2027.42/87852/2/071904_1.pdf
dc.identifier.doi	10.1063/1.1862331	en_US
dc.identifier.source	Applied Physics Letters	en_US
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