JavaScript is disabled for your browser. Some features of this site may not work without it.
NiGe on Ge(001) by reactive deposition epitaxy: An in situ ultrahigh-vacuum transmission-electron microscopy study
Nath, R.; Soo, C. W.; Boothroyd, C. B.; Yeadon, M.; Chi, D. Z.; Sun, H. P.; Chen, Y. B.; Pan, X. Q.; Foo, Y. L.
2005-05-16
Citation:Nath, R.; Soo, C. W.; Boothroyd, C. B.; Yeadon, M.; Chi, D. Z.; Sun, H. P.; Chen, Y. B.; Pan, X. Q.; Foo, Y. L. (2005). "NiGe on Ge(001) by reactive deposition epitaxy: An in situ ultrahigh-vacuum transmission-electron microscopy study." Applied Physics Letters 86(20): 201908-201908-3.
Abstract: We use an ultrahigh-vacuum transmission-electron microscopy, equipped with an electron-beam evaporator directed at a heating stage in the pole piece, to follow the reaction pathway of Ni on Ge(001) substrate at 300 °C. Using reactive deposition, we illustrate that epitaxial orthorhombic NiGe (a = 5.381 Åa=5.381Å, b = 3.428 Åb=3.428Å, and c = 5.811 Åc=5.811Å) phase can be grown directly without the initial formation of metal-rich Ni2GeNi2Ge phase. The epitaxial orientation of the NiGe islands and the underlying Ge(001) substrate were found to be NiGe(01)//Ge(001)NiGe(1¯01)∕∕Ge(001) and NiGe[010]//Ge[110]NiGe[010]∕∕Ge[110].
