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P‐143: A Novel Current‐Scaling a‐Si:H TFTs Pixel Electrode Circuit for Active‐Matrix Organic Light‐Emitting Displays

dc.contributor.authorLin, Yen‐chungen_US
dc.contributor.authorShieh, Han‐ping D.en_US
dc.contributor.authorSu, Chia‐chenen_US
dc.contributor.authorLee, Hojinen_US
dc.contributor.authorKanicki, Jerzyen_US
dc.date.accessioned2012-07-12T17:22:35Z
dc.date.available2012-07-12T17:22:35Z
dc.date.issued2005-05en_US
dc.identifier.citationLin, Yen‐chung ; Shieh, Han‐ping D. ; Su, Chia‐chen ; Lee, Hojin; Kanicki, Jerzy (2005). "Pâ 143: A Novel Currentâ Scaling aâ Si:H TFTs Pixel Electrode Circuit for Activeâ Matrix Organic Lightâ Emitting Displays." SID Symposium Digest of Technical Papers 36(1). <http://hdl.handle.net/2027.42/92010>en_US
dc.identifier.issn0097-966Xen_US
dc.identifier.issn2168-0159en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/92010
dc.description.abstractHydrogenated amorphous silicon thin‐film transistor (a‐Si:H TFT) pixel electrode circuit with a function of current scaling is proposed for active‐matrix organic light‐emitting displays (AM‐OLEDs). In contrast to the conventional current mirror pixel electrode circuit, in this circuit a high data‐to‐organic light‐emitting device (OLED) current ratio can be achieved, without increasing the a‐Si:H TFT size, by using a cascade structure of storage capacitors. Moreover, the proposed circuit can compensate for the variations of TFT threshold voltage. Simulation results, based on a‐Si:H TFT and OLED experimental data, showed that a data‐to‐OLED current ratio larger than 10 and a fast pixel programming time can be accomplished with the proposed circuit.en_US
dc.publisherBlackwell Publishing Ltden_US
dc.publisherWiley Periodicals, Inc.en_US
dc.titleP‐143: A Novel Current‐Scaling a‐Si:H TFTs Pixel Electrode Circuit for Active‐Matrix Organic Light‐Emitting Displaysen_US
dc.typeArticleen_US
dc.rights.robotsIndexNoFollowen_US
dc.subject.hlbsecondlevelElectrical Engineeringen_US
dc.subject.hlbtoplevelEngineeringen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumSolid‐State Electronics Laboratory, Dept. of EECS, University of Michigan, Ann Arbor, MI, USAen_US
dc.contributor.affiliationotherDisplay Institute, National Chiao Tung University, Hsinchu, Taiwan, 300en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/92010/1/1.2036579.pdf
dc.identifier.doi10.1889/1.2036579en_US
dc.identifier.sourceSID Symposium Digest of Technical Papersen_US
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dc.owningcollnameInterdisciplinary and Peer-Reviewed


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