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P‐13: Photosensitivity of Amorphous IGZO TFTs for Active‐Matrix Flat‐Panel Displays

dc.contributor.authorChuang, Chiao‐shunen_US
dc.contributor.authorFung, Tze‐chingen_US
dc.contributor.authorMullins, Barry G.en_US
dc.contributor.authorNomura, Kenjien_US
dc.contributor.authorKamiya, Toshioen_US
dc.contributor.authorShieh, Han‐ping Daviden_US
dc.contributor.authorHosono, Hideoen_US
dc.contributor.authorKanicki, Jerzyen_US
dc.date.accessioned2012-07-12T17:23:11Z
dc.date.available2012-07-12T17:23:11Z
dc.date.issued2008-05en_US
dc.identifier.citationChuang, Chiao‐shun ; Fung, Tze‐ching ; Mullins, Barry G.; Nomura, Kenji; Kamiya, Toshio; Shieh, Han‐ping David ; Hosono, Hideo; Kanicki, Jerzy (2008). "Pâ 13: Photosensitivity of Amorphous IGZO TFTs for Activeâ Matrix Flatâ Panel Displays." SID Symposium Digest of Technical Papers 39(1). <http://hdl.handle.net/2027.42/92030>en_US
dc.identifier.issn0097-966Xen_US
dc.identifier.issn2168-0159en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/92030
dc.description.abstractWe studied the optical and electrical properties of the amorphous indium gallium zinc oxide thin‐film transistors (a‐IGZO TFTs). To develop a‐IGZO density‐of‐states model, intrinsic a‐IGZO optical properties such as optical band gap and Urbach energy, and TFT characteristics under illumination are investigated. During the a‐IGZO TFTs illumination with the wavelengths ranging from 460 to 660 nm, the off‐state drain current only slightly increases while a large increase was observed for the wavelength below 400 nm. Threshold voltage and subthreshold swing are also only slightly modified between 460 to 660 nm, while field‐effect mobility is almost unchanged in the investigated photon energy range. The observed results are consistent with the a‐IGZO optical energy band gap of about 3.05 eV. This study suggest that the a‐IGZO TFTs are light sensitive above 3.0 eV and photogenerated electrons are more mobile than holes within device channel region.en_US
dc.publisherBlackwell Publishing Ltden_US
dc.publisherWiley Periodicals, Inc.en_US
dc.titleP‐13: Photosensitivity of Amorphous IGZO TFTs for Active‐Matrix Flat‐Panel Displaysen_US
dc.typeArticleen_US
dc.rights.robotsIndexNoFollowen_US
dc.subject.hlbsecondlevelElectrical Engineeringen_US
dc.subject.hlbtoplevelEngineeringen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDept. of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan, 48105 USAen_US
dc.contributor.affiliationotherERATO‐SORST, JST, in Frontier Collaborative Research Center / Materials and Structures Laboratory, Mail Box R3‐1, Tokyo Institute of Technology 4259 Nagatsuta, Midori‐ku, Yokohama 226‐8503, Japanen_US
dc.contributor.affiliationotherDept. of Photonics & Display Institute, National Chiao Tung University, Hsinchu, Taiwan, 30010 R.O.C.en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/92030/1/1.3069354.pdf
dc.identifier.doi10.1889/1.3069354en_US
dc.identifier.sourceSID Symposium Digest of Technical Papersen_US
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dc.owningcollnameInterdisciplinary and Peer-Reviewed


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