Abstract: The electrical characteristics and stabilities of dual‐gate (DG) coplanar homojunction amorphous indium‐gallium‐zinc‐oxide thin‐film transistors (a‐IGZO TFTs) are described. When the gate voltage is applied on top and bottom electrodes, the DG a‐IGZO TFT showed an excellent electrical performance with the sub‐threshold swing of 99 mV/dec, the mobility of 15.1 cm 2 /V·s and the on‐off ratio of 10 9 . Under positive bias temperature stress, the device threshold voltage shifts about +4.5V after 10,000 seconds, while its shifts under negative bias temperature stress are very small. The effect of TFT illumination is also discussed.
