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Structure of droplet-epitaxy-grown InAs/GaAs quantum dots

dc.contributor.authorCohen, Eyalen_US
dc.contributor.authorYochelis, Shiraen_US
dc.contributor.authorWestreich, Ohaden_US
dc.contributor.authorShusterman, Sergeyen_US
dc.contributor.authorKumah, Divine P.en_US
dc.contributor.authorClarke, Royen_US
dc.contributor.authorYacoby, Yizhaken_US
dc.contributor.authorPaltiel, Yossien_US
dc.date.accessioned2013-07-03T19:31:26Z
dc.date.available2013-07-03T19:31:26Z
dc.date.issued2011-06-13en_US
dc.identifier.citationCohen, Eyal; Yochelis, Shira; Westreich, Ohad; Shusterman, Sergey; Kumah, Divine P.; Clarke, Roy; Yacoby, Yizhak; Paltiel, Yossi (2011). "Structure of droplet-epitaxy-grown InAs/GaAs quantum dots." Applied Physics Letters, 98(24): 243115. <http://hdl.handle.net/2027.42/98673>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/98673
dc.publisherThe American Institute of Physicsen_US
dc.subjectAtomic Structureen_US
dc.subjectBendingen_US
dc.subjectDiffusionen_US
dc.subjectDropsen_US
dc.subjectElectron Densityen_US
dc.subjectEpitaxial Growthen_US
dc.subjectGallium Arsenideen_US
dc.subjectIII-V Semiconductorsen_US
dc.subjectIndium Compoundsen_US
dc.subjectSemiconductor Growthen_US
dc.subjectSemiconductor Quantum Dotsen_US
dc.titleStructure of droplet-epitaxy-grown InAs/GaAs quantum dotsen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/98673/1/ApplPhysLett_98_243115.pdf
dc.identifier.doi10.1063/1.3599063en_US
dc.identifier.sourceApplied Physics Lettersen_US
dc.owningcollnamePhysics, Department of


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