Indium phosphide-based high performance quantum well avalanche photodiodes and integrated photoreceivers.
Gutierrez-Aitken, Augusto L.
1994
Abstract
Large bandwidth optical communication systems are becoming more important than ever for transferring information efficiently. The availability of high performance photodetectors and front-end photoreceivers that operate in the low-loss 1.55 $\mu$m wavelength window of silica optical fibers is crucial for the development of these systems. The objective of the present work was to design, fabricate, and characterize InP-based discrete Separate Absorption and Multiplication Avalanche Photodiodes with a strained MQW avalanche region (SAM(MQW)-APD) and monolithically integrated transimpedance PIN-FET and PIN-HBT photoreceivers, which operate at multi-Gbit/s. High-speed and high gain-bandwidth product SAM(MQW)-APDs with a strained In$\sb{x}$Ga$\sb{1-x}$As/In$\sb{y}$Al$\sb{1-y}$As avalanche region were fabricated and characterized. An APD using hole injection into a lattice-matched MQW multiplication region demonstrated a bandwidth of $\sim$6.7 GHz, while an APD with tensile strain in the wells and compressive strain in the barriers demonstrated a bandwidth of $\sim$7.9 GHz. An APD using electron injection into a lattice-matched MQW multiplication region demonstrated a G*BW product of $\sim$110 GHz, while an APD with compressive strain in the wells and tensile strain in the barriers demonstrated a G*BW product of $\sim$139 GHz. Integrated PIN-FET photoreceivers with transimpedance and transimpedance/voltage amplifiers based on regrown 0.1 $\mu$m gate length MODFETs were fabricated and characterized. The regrown MODFETs demonstrated high transconductance, with peak values of 610 mS/mm and current densities up to 350 mA/mm at a drain bias of 1.5 V, and $f\sb{T}$ and $f\sb{max}$ of 104 GHz and 70 GHz, respectively. The photoreceiver with a 3-transistor transimpedance amplifier showed a transimpedance gain of 42 dB$\Omega$, and an optical-to-electrical conversion $-$3 dB bandwidth of 9.5 GHz. The photoreceiver with a 7-transistor transimpedance/voltage amplifier exhibited a transimpedance gain of 63 dB$\Omega$, and an optical-to-electrical bandwidth of 3.3 GHz. Integrated PIN-HBT transimpedance photoreceivers using the base, collector and subcollector HBT layers as the p-i-n photodiode were fabricated and characterized. Discrete HBTs demonstrated 54 GHz and 51 GHz for $f\sb{T}$ and $f\sb{max}$, respectively. The transimpedance amplifier exhibited an electrical transimpedance bandwidth of 17 GHz and 10 GHz with and without a peaking inductor, and a gain of 40 dB$\Omega$. The integrated photoreceiver with a 10 $\mu$m x 10 $\mu$m p-i-n photodiode demonstrated an optical-to-electrical conversion $-$3 dB bandwidth of 7.1 GHz.Other Identifiers
(UMI)AAI9423195
Subjects
Engineering, Electronics and Electrical
Types
Thesis
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