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Cracking, texture evolution and electrical properties of ferroelectric thin films.

dc.contributor.authorChen, San-Yuanen_US
dc.contributor.advisorChen, I-Weien_US
dc.date.accessioned2014-02-24T16:20:23Z
dc.date.available2014-02-24T16:20:23Z
dc.date.issued1994en_US
dc.identifier.other(UMI)AAI9513323en_US
dc.identifier.urihttp://gateway.proquest.com/openurl?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&res_dat=xri:pqm&rft_dat=xri:pqdiss:9513323en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/104275
dc.description.abstractWet chemical methods of sol-gel and metallo-organic decomposition processes were used to prepare BaTiO$\sb3$ and Pb(Zr,Ti)O$\sb3$ (PZT) ferroelectric thin films. These films were pyrolyzed under a variety of heating rates, temperatures, and atmospheres to obtain different textures and microstructures. Thermal analysis, X-ray diffraction, dielectric properties and critical conditions of cracking have been evaluated to obtain an improved understanding of the mechanisms of pyrolysis, texture evolution and dielectric response in thin films. Two distinct cracking mechanisms which operate in different temperature regimes have been identified. Drying cracks form at lower temperatures when the maximum evaporation/decomposition rate is experienced, while oxidation cracks form at higher temperatures when the decomposition is nearly complete. The critical thickness, crack spacing, and heating rate follow unique scaling laws predicted by fracture mechanics taking into account the viscoelastic origin of pyrolysis stresses. The mechanisms of texture selection at the PZT/Pt/Si substrate interface have been identified. An intermetallic phase Pt$\sb{5-7}$Pb(111) that is epitaxial with Pt(111) precedes the formation of PZT(111). A layer compound PbO (001) that forms at lower temperatures provides a lattice-matching buffer for PZT(100). Fast heating at high temperature favors (111) texture, while intermediate temperature pyrolysis prior to high temperature annealing promotes (100) texture. The optimal textures at different compositions are phase-dependent. Zr-rich(111) rhombohedral films and Ti-rich(100) tetragonal films have higher dielectric constant and polarization because their textures match the preferred polarization in the respective ferroelectric phases. At the morphotropic phase boundary where both tetragonal and rhombohedral symmetry, and hence, multiple polarization directions, are allowed, single textured films have a lower dielectric constant than the mixed textured films. The effects of chemistry of precursors (alkoxides and carboxylates) can be rationalized by their different carbon content and decomposition temperature in the precursor. These characteristics influence the crack formation, texture evolution, microstructure development and dielectric properties in a predictable manner, following our mechanistic understanding of these aspects. This is despite their very different conversion ratio from organics to ceramics.en_US
dc.format.extent226 p.en_US
dc.subjectChemistry, Inorganicen_US
dc.subjectEngineering, Mechanicalen_US
dc.subjectEngineering, Materials Scienceen_US
dc.titleCracking, texture evolution and electrical properties of ferroelectric thin films.en_US
dc.typeThesisen_US
dc.description.thesisdegreenamePhDen_US
dc.description.thesisdegreedisciplineMaterials Science and Engineeringen_US
dc.description.thesisdegreegrantorUniversity of Michigan, Horace H. Rackham School of Graduate Studiesen_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/104275/1/9513323.pdf
dc.description.filedescriptionDescription of 9513323.pdf : Restricted to UM users only.en_US
dc.owningcollnameDissertations and Theses (Ph.D. and Master's)


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