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Nonlinear optical studies of relaxation in semiconductor microstructures.

dc.contributor.authorRemillard, Jeffrey Thomasen_US
dc.contributor.advisorSteel, Duncan G.en_US
dc.date.accessioned2014-02-24T16:28:20Z
dc.date.available2014-02-24T16:28:20Z
dc.date.issued1990en_US
dc.identifier.other(UMI)AAI9023622en_US
dc.identifier.urihttp://gateway.proquest.com/openurl?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&res_dat=xri:pqm&rft_dat=xri:pqdiss:9023622en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/105501
dc.description.abstractThe purpose of this research is to study the relaxation of optically generated excitons and carriers in semiconductor microstructures using four wave mixing (FWM) spectroscopy. The systems studied include CdSSe microcrystallite doped glasses and GaAs/AlGaAs multiple quantum well structures (MQWS). Exposing a semiconductor to optical radiation near the fundamental band gap results in the creation of populations of elementary excitations including electrons, holes, and excitons, and also results in the creation of a superposition state between the ground and excited state of the solid. The work in this dissertation examines the relaxation of the populations of elementary excitations and the relaxation of the coherence between the ground and excited state using four wave mixing spectroscopy. First, the nonlinear optical response of simple two level systems is examined in order to provide insight into the types of line shapes expected from semiconductors. It is shown that the line shape is strongly dependent on how the system is coupled to the reservoir and the consequences of coupling to a reservoir are examined in a FWM measurement made in atomic sodium. The first semiconductor system studied is CdSSe microcrystallite doped glass. This system is shown to have a very slow component to the nonlinear response which has a optical intensity dependence and temperature dependence which suggests that the FWM response in these materials is trap mediated. Room temperature FWM measurements in GaAs MQWS enables the measurement of the carrier recombination time and the ambipolar diffusion coefficient. Using the technique of correlated optical fields, a slow component to the nonlinear response was measured showing an interference profile which suggests a possible shift of the exciton resonance due to the optically generated carriers. At low temperatures (2-20 K), measurements of the exciton line shape and relaxation time were made and evidence for exciton spectral diffusion was found. The low temperature line shapes can be qualitatively reproduced using Modified Optical Bloch equations which include the effects of spectral diffusion.en_US
dc.format.extent154 p.en_US
dc.subjectPhysics, Condensed Matteren_US
dc.subjectPhysics, Opticsen_US
dc.titleNonlinear optical studies of relaxation in semiconductor microstructures.en_US
dc.typeThesisen_US
dc.description.thesisdegreenamePhDen_US
dc.description.thesisdegreedisciplineElectrical Engineeringen_US
dc.description.thesisdegreegrantorUniversity of Michigan, Horace H. Rackham School of Graduate Studiesen_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/105501/1/9023622.pdf
dc.description.filedescriptionDescription of 9023622.pdf : Restricted to UM users only.en_US
dc.owningcollnameDissertations and Theses (Ph.D. and Master's)


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