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Mechanisms of silicon sputtering and cluster formation explained by atomic level simulations
dc.contributor.authorBarry, Peter R.en_US
dc.contributor.authorPhilipp, Patricken_US
dc.contributor.authorWirtz, Tomen_US
dc.contributor.authorKieffer, Johnen_US
dc.date.accessioned2014-03-05T18:18:57Z
dc.date.available2015-04-16T14:24:20Zen_US
dc.date.issued2014-03en_US
dc.identifier.citationBarry, Peter R.; Philipp, Patrick; Wirtz, Tom; Kieffer, John (2014). "Mechanisms of silicon sputtering and cluster formation explained by atomic level simulations." Journal of Mass Spectrometry 49(3): 185-194.en_US
dc.identifier.issn1076-5174en_US
dc.identifier.issn1096-9888en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/106088
dc.publisherSpringeren_US
dc.publisherWiley Periodicals, Inc.en_US
dc.subject.otherSIMSen_US
dc.subject.otherSimulationen_US
dc.subject.otherSiliconen_US
dc.subject.otherClustersen_US
dc.subject.otherOxygenen_US
dc.titleMechanisms of silicon sputtering and cluster formation explained by atomic level simulationsen_US
dc.typeArticleen_US
dc.rights.robotsIndexNoFollowen_US
dc.subject.hlbsecondlevelChemistryen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/106088/1/jms3317.pdf
dc.identifier.doi10.1002/jms.3317en_US
dc.identifier.sourceJournal of Mass Spectrometryen_US
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dc.owningcollnameInterdisciplinary and Peer-Reviewed


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