Origin of broad luminescence from site‐controlled InGaN nanodots fabricated by selective‐area epitaxy (Phys. Status Solidi A 3∕2014)

Lee, L. K.; Aagesen, L. K.; Thornton, K.; Ku, P.‐c.

Origin of broad luminescence from site‐controlled InGaN nanodots fabricated by selective‐area epitaxy (Phys. Status Solidi A 3∕2014)

dc.contributor.author	Lee, L. K.	en_US
dc.contributor.author	Aagesen, L. K.	en_US
dc.contributor.author	Thornton, K.	en_US
dc.contributor.author	Ku, P.‐c.	en_US
dc.date.accessioned	2014-05-21T18:03:20Z
dc.date.available	2015-06-01T15:48:45Z	en_US
dc.date.issued	2014-03	en_US
dc.identifier.citation	Lee, L. K.; Aagesen, L. K.; Thornton, K.; Ku, P.‐c. (2014). "Origin of broad luminescence from siteâ controlled InGaN nanodots fabricated by selectiveâ area epitaxy (Phys. Status Solidi A 3â 2014)." physica status solidi (a) 211(3): n/a-n/a.	en_US
dc.identifier.issn	1862-6300	en_US
dc.identifier.issn	1862-6319	en_US
dc.identifier.uri	https://hdl.handle.net/2027.42/106741
dc.publisher	Wiley Periodicals, Inc.	en_US
dc.title	Origin of broad luminescence from site‐controlled InGaN nanodots fabricated by selective‐area epitaxy (Phys. Status Solidi A 3∕2014)	en_US
dc.type	Article	en_US
dc.rights.robots	IndexNoFollow	en_US
dc.subject.hlbsecondlevel	Materials Science and Engineering	en_US
dc.subject.hlbtoplevel	Engineering	en_US
dc.description.peerreviewed	Peer Reviewed	en_US
dc.description.bitstreamurl	http://deepblue.lib.umich.edu/bitstream/2027.42/106741/1/pssa201470216.pdf
dc.identifier.doi	10.1002/pssa.201470216	en_US
dc.identifier.source	physica status solidi (a)	en_US
dc.owningcollname	Interdisciplinary and Peer-Reviewed

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