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Origin of broad luminescence from site‐controlled InGaN nanodots fabricated by selective‐area epitaxy
dc.contributor.authorLee, L. K.en_US
dc.contributor.authorAagesen, L. K.en_US
dc.contributor.authorThornton, K.en_US
dc.contributor.authorKu, P.‐c.en_US
dc.date.accessioned2014-05-21T18:03:33Z
dc.date.available2015-06-01T15:48:45Zen_US
dc.date.issued2014-03en_US
dc.identifier.citationLee, L. K.; Aagesen, L. K.; Thornton, K.; Ku, P.‐c. (2014). "Origin of broad luminescence from siteâ controlled InGaN nanodots fabricated by selectiveâ area epitaxy." physica status solidi (a) 211(3): 531-535.en_US
dc.identifier.issn1862-6300en_US
dc.identifier.issn1862-6319en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/106777
dc.publisherJohn Wiley and Sonsen_US
dc.subject.otherPhase‐Field Modelen_US
dc.subject.otherMorphologyen_US
dc.subject.otherGallium Nitrideen_US
dc.subject.otherSelective Area Epitaxyen_US
dc.titleOrigin of broad luminescence from site‐controlled InGaN nanodots fabricated by selective‐area epitaxyen_US
dc.typeArticleen_US
dc.rights.robotsIndexNoFollowen_US
dc.subject.hlbsecondlevelMaterials Science and Engineeringen_US
dc.subject.hlbtoplevelEngineeringen_US
dc.description.peerreviewedPeer Revieweden_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/106777/1/pssa201330362.pdf
dc.identifier.doi10.1002/pssa.201330362en_US
dc.identifier.sourcephysica status solidi (a)en_US
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