Show simple item record

Resonant -tunneling diodes in high-performance digital circuit applications.

dc.contributor.authorGonzalez, Alejandro Flavio
dc.contributor.advisorMazumder, Pinaki
dc.date.accessioned2016-08-30T15:12:42Z
dc.date.available2016-08-30T15:12:42Z
dc.date.issued2002
dc.identifier.urihttp://gateway.proquest.com/openurl?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&res_dat=xri:pqm&rft_dat=xri:pqdiss:3068869
dc.identifier.urihttps://hdl.handle.net/2027.42/123176
dc.description.abstractThis dissertation presents research on the application of resonant-tunneling diodes (RTDs) in multivalued-logic circuits and very-high-speed digital circuits. An RTD-based signed-digit full adder cell is presented in which carry propagation along a chain of adders is eliminated by means of a redundant arithmetic algorithm. RTDs enable efficient implementation of sophisticated multivalued-logic functions. The two-peak negative-differential-resistance (NDR) characteristics of two RTDs connected in series are used to easily detect four voltage threshold levels of a multivalued input signal. The proposed concept was successfully demonstrated via a prototype in which RTDs were connected as external devices to a custom-designed CMOS integrated circuit. A second, fully integrated, prototype was developed using MOS-NDR in a standard CMOS process. MOS-NDR is a new prototyping technique for circuits that combine MOS transistors and NDR devices where NDR characteristics are emulated using only enhancement-mode n-channel MOSFETs. This was the first demonstration of the MOS-NDR technique in multivalued logic applications. A simulation-based study is presented in which performance of bistable logic circuits combining RTDs and III--V transistors is measured as experiment parameters vary. The circuit topology, the type and speed of transistors, and the driven output load are some of the parameters used in the experiments. There are two basic types of topologies for RTD bistable logic circuits: <italic>quantum bistable logic</italic>, where the state acquired after each clocking event is determined by the interaction between RTDs and transistors, and <italic>balanced pair logic</italic>, where the logic state depends on the interaction of two or more RTDs. Two types of compound-semiconductor transistors were considered in the study, namely, heterostructure bipolar transistors and high-electron-mobility transistors. The results of the study indicate that the best circuit configuration combines the balanced-pair logic with high-electron-mobility transistors. The experimental simulation framework developed for this study is not tied to any particular technology or circuit technique, and it can thus be used as a general-purpose tool for circuit evaluation and comparison.
dc.format.extent159 p.
dc.languageEnglish
dc.language.isoEN
dc.subjectApplications
dc.subjectDigital Circuit
dc.subjectHigh
dc.subjectMosfets
dc.subjectNegative Differential Resistance
dc.subjectPerformance
dc.subjectResonant Tunneling Diodes
dc.subjectResonant-tunneling Diodes
dc.titleResonant -tunneling diodes in high-performance digital circuit applications.
dc.typeThesis
dc.description.thesisdegreenamePhDen_US
dc.description.thesisdegreedisciplineApplied Sciences
dc.description.thesisdegreedisciplineElectrical engineering
dc.description.thesisdegreegrantorUniversity of Michigan, Horace H. Rackham School of Graduate Studies
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/123176/2/3068869.pdf
dc.owningcollnameDissertations and Theses (Ph.D. and Master's)


Files in this item

Show simple item record

Remediation of Harmful Language

The University of Michigan Library aims to describe library materials in a way that respects the people and communities who create, use, and are represented in our collections. Report harmful or offensive language in catalog records, finding aids, or elsewhere in our collections anonymously through our metadata feedback form. More information at Remediation of Harmful Language.

Accessibility

If you are unable to use this file in its current format, please select the Contact Us link and we can modify it to make it more accessible to you.