Gallium arsenide MESFET static RAM design for embedded applications.
dc.contributor.author | Chandna, Ajay | |
dc.contributor.advisor | Brown, Richard B. | |
dc.date.accessioned | 2016-08-30T17:09:42Z | |
dc.date.available | 2016-08-30T17:09:42Z | |
dc.date.issued | 1995 | |
dc.identifier.uri | http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&res_dat=xri:pqm&rft_dat=xri:pqdiss:9527595 | |
dc.identifier.uri | https://hdl.handle.net/2027.42/129508 | |
dc.description.abstract | This work describes circuit structures and design methodologies needed to achieve higher performance, lower power, process tolerant embedded static RAMs and digital circuits using E/D MESFETs in GaAs. A novel current mirror memory cell (CMMC) is presented that achieves memories with a smaller cell area, faster read and write times, and more reliable operation than is possible using a conventional memory cell. This cell achieves the maximum suppression of leakage currents using a single 2-V supply voltage. We describe two SRAM implementations and their testing results. Fault models and testing procedures are presented for the CMMC. Several circuit design and characterization methodologies are described that are needed to achieve robust circuits in processing technologies with low noise margins. We present a low-power logic style, called Power Rail Logic (PRL), which can achieve up to 40% lower power-delay products than equivalent DCFL circuits. Test results for a demonstration vehicle for this logic style are presented. We also present the Aurora RAM Compiler (ARC) that uses the process tolerant design methodologies, the new memory cell, and the new logic style described in this thesis. The compiler iteratively optimizes an SRAM using HSPICE for calculating delays, power dissipation, and signal noise margins. The compiler was built using a flexible design framework that can easily adapt with minimal effort to characterize memories in different MESFET processes. | |
dc.format.extent | 178 p. | |
dc.language | English | |
dc.language.iso | EN | |
dc.subject | Applications | |
dc.subject | Design | |
dc.subject | Embedded | |
dc.subject | Gallium Arsenide | |
dc.subject | Mesfet | |
dc.subject | Ram | |
dc.subject | Static | |
dc.title | Gallium arsenide MESFET static RAM design for embedded applications. | |
dc.type | Thesis | |
dc.description.thesisdegreename | PhD | en_US |
dc.description.thesisdegreediscipline | Applied Sciences | |
dc.description.thesisdegreediscipline | Condensed matter physics | |
dc.description.thesisdegreediscipline | Electrical engineering | |
dc.description.thesisdegreediscipline | Pure Sciences | |
dc.description.thesisdegreegrantor | University of Michigan, Horace H. Rackham School of Graduate Studies | |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/129508/2/9527595.pdf | |
dc.owningcollname | Dissertations and Theses (Ph.D. and Master's) |
Files in this item
Remediation of Harmful Language
The University of Michigan Library aims to describe library materials in a way that respects the people and communities who create, use, and are represented in our collections. Report harmful or offensive language in catalog records, finding aids, or elsewhere in our collections anonymously through our metadata feedback form. More information at Remediation of Harmful Language.
Accessibility
If you are unable to use this file in its current format, please select the Contact Us link and we can modify it to make it more accessible to you.