W-band three -dimensional integrated circuits utilizing silicon micromachining.

Abstract

This thesis presents several low-loss micromachined W-band circuit components suitable for integration in a multi-layer silicon environment. Some of these components are micromachined finite ground coplanar waveguides, micromachined circuit combining networks, through-wafer vertical interconnects, and wafer-to-wafer vertical interconnects. In addition, this thesis also includes implementation of these novel architectures into the first 94 GHz micromachined silicon multi-layer transmit module. This transmit module is not only a high-density multi-layer circuit, but an integrated conformal package utilizing thermocompression bonding. The multi-layer silicon environment, with appropriate design and packaging, can provide a solution to the low power problems of conventional monolithic microwave integrated circuits (MMICs) by providing more power per unit area. Although this research effort includes a large fabrication effort, the work is presented with equal weighting on design, simulation, fabrication, and measurement. The strong technology base established through this project forms a legacy for future technology maturation and may also be applied at lower frequencies.