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Radiation damage of amorphous silicon, thin‐film, field‐effect transistors

dc.contributor.authorBoudry, J. M.
dc.contributor.authorAntonuk, L. E.
dc.date.accessioned2017-01-06T20:48:46Z
dc.date.available2017-01-06T20:48:46Z
dc.date.issued1996-05
dc.identifier.citationBoudry, J. M.; Antonuk, L. E. (1996). "Radiation damage of amorphous silicon, thin‐film, field‐effect transistors." Medical Physics 23(5): 743-754.
dc.identifier.issn0094-2405
dc.identifier.issn2473-4209
dc.identifier.urihttps://hdl.handle.net/2027.42/134975
dc.publisherAmerican Association of Physicists in Medicine
dc.publisherWiley Periodicals, Inc.
dc.subject.otherSILICON
dc.subject.otherHYDROGENATION
dc.subject.otherCOBALT 60
dc.subject.otherLEAKAGE CURRENT
dc.subject.other87.55.07
dc.subject.otherDosimetry
dc.subject.otherField effect transistors
dc.subject.otherAnnealing
dc.subject.otherLeakage currents
dc.subject.otherElectrical properties
dc.subject.otherAmorphous semiconductors
dc.subject.otherRadiation damage
dc.subject.otherTransistors
dc.subject.otherMedical imaging
dc.subject.otherElectric measurements
dc.subject.other87.56.01.g
dc.subject.otherRadiography
dc.subject.otherX‐ray effects
dc.subject.otherField effect devices
dc.subject.otherAMORPHOUS SEMICONDUCTORS
dc.subject.otherRADIOTHERAPY
dc.subject.otherX−RAY RADIOGRAPHY
dc.subject.otherPHYSICAL RADIATION EFFECTS
dc.subject.otherFIELD EFFECT TRANSISTORS
dc.titleRadiation damage of amorphous silicon, thin‐film, field‐effect transistors
dc.typeArticleen_US
dc.rights.robotsIndexNoFollow
dc.subject.hlbsecondlevelMedicine (General)
dc.subject.hlbtoplevelHealth Sciences
dc.description.peerreviewedPeer Reviewed
dc.contributor.affiliationumDepartment of Radiation Oncology, University of Michigan, Ann Arbor, Michigan 48109‐0010
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/134975/1/mp7668.pdf
dc.identifier.doi10.1118/1.597668
dc.identifier.sourceMedical Physics
dc.owningcollnameInterdisciplinary and Peer-Reviewed


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