Compound Semiconductor Quantum Wells and Dots for Light-Emitting Diode Applications: Insights on Structural and Optoelectronic Properties

Abstract

Compound semiconductor nanostructures have revolutionized solid-state devices through their unique electronic, optical, and strain properties. To engineer nanostructures and optimize devices, we must understand their structural and optoelectronic properties. In this dissertation project, we have characterized the structural coherence of homoepitaxial quantum dot growth on bulk GaN substrates, and we have calculated the effects of alloy composition fluctuations on recombination rates in InGaN-based light-emitting diodes. Additionally, we have explored the effects of composition, width, and strain of GaAsSb/GaAs quantum wells on band alignment type. This work allows us to better develop nanostructure-based devices for efficient, solid-state lighting and optical communications.