Now showing items 131-132 of 132
Growth and properties of In0.52Al0.48As/In0.53Ga0.47As, GaAS: In and InGaAs/GaAs multilayers
(Elsevier, 1987-02-02)
We have investigated the properties of some In-containing materials and heterostructures grown by molecular beam epitaxy on GaAs and InP substrates. Photoluminescence spectra of InGaAs/InAlAs quantum wells have been related ...
Demonstration of dual gain mechanism in an InGaAs/InAlAs superlattice photodiode
(The American Institute of Physics, 1987-04-27)
A high‐gain photodiode in which the internal gain can result from either potential barrier lowering or mass filtering action, depending on device geometry and bias conditions, is proposed and demonstrated. The photodiode ...