Now showing items 71-80 of 132
On the classification of vacuum zero Simon tensor solutions in relativity
(The American Institute of Physics, 1988-02)
The Perjes vector is decomposed on a Frenet basis. Geometric insights into the Perjes classification of zero Simon tensor vacuum solutions to the Einstein field equations are obtained. The behavior of the classification ...
The electrical and optical behaviour of lamp-annealed Si-implanted InP(Fe)
(IOP Publishing Ltd, 1988-10-14)
The electrical and optical behaviour of halogen-lamp-annealed InP(Fe) implanted with 30 and 70 keV 29Si+ ions (dose 5*1012 cm-2) has been investigated. The annealing was carried out in the temperature range 800-50 degrees ...
Impurity‐induced layer disordering of In0.53Ga0.47As/In0.52Al0.48As heterostructures
(The American Institute of Physics, 1988-12-05)
Impurity‐induced layer disordering of In0.53 Ga0.47 As/In0.52 Al0.48 As heterostructures grown by molecular beam epitaxy has been observed by Auger electron spectroscopy depth profiling. We find that Si+ ion implantation ...
Microwave and millimeter‐wave power generation in silicon carbide avalanche devices
(The American Institute of Physics, 1988-08-01)
Silicon carbide (SiC), due to its thermal and electronic properties, has long been considered an excellent device material for microwave and millimeter‐wave power generation. Numerical simulations were performed to study ...
Indium diffusion in the chemical potential gradient at an In0.53Ga0.47As/In0.52Al0.48As interface
(The American Institute of Physics, 1988-06-13)
We have measured the distribution of group III metals at In0.53Ga0.47As/In0.52Al0.48As interfaces before and after annealing at 1085 K. We find little evidence for Al interdiffusion, but the Ga concentration profiles show ...
Finite element model for ultrasonic cleaning
(Elsevier, 1988-11-08)
Ultrasonic cleaning is modeled as a plane wave striking a sphere at the interface between a solid and a fluid (an axisymmetric fluid-structure interaction problem). To study this problem the [phi]-U-P0 finite element method ...
Piezoreflectance characterization of double‐barrier resonant tunneling structures
(The American Institute of Physics, 1988-09-05)
The piezoreflectance technique has been used to optically characterize resonant tunneling structures that utilize isolated single quantum wells. The heavy‐ and light‐hole transitions associated with the quantum wells were ...
Low‐ and high‐field transport properties of pseudomorphic InxGa1−xAs/In0.52Al0.48As (0.53≤x≤0.65) modulation‐doped heterostructures
(The American Institute of Physics, 1988-08-15)
We have grown pseudomorphic InxGa1−xAs/In0.52Al0.48As modulation‐doped heterostructures by molecular‐beam epitaxy under carefully controlled growth conditions. Mobilities as high as 13 900, 74 000, and 134 000 cm2/V s are ...
Study of the consequence of excess indium in the active channel of InGaAs/InAlAs high electron mobility transistors on device properties
(The American Institute of Physics, 1988-02-29)
A study of the properties of In0.52Al0.48As/In0.53+xGa0.47−xAs high electron mobility transistors is carried out for 0%, 7%, and 12% excess In values in the channel. Theoretical analysis shows that the enhanced In causes ...
Real anomalies
(The American Institute of Physics, 1988-06)
The relationship between global anomalies of quantum theory and the topology of spaces of real Fredholm operators is shown. The spectral properties of such operators and how they are seen in examples of global anomalies ...