Now showing items 11-17 of 17
Properties of III-Nitride-Based Polariton and Spin Polariton Diode Lasers
(2018)
The cavity electrodynamic regime of strong coupling of emitter-photon interactions in a semiconductor microcavity gives rise to new light-matter entangled quasiparticles, also known as exciton-polaritons. The non-linear ...
Charge and Exciton Dynamics in Organic Optoelectronic Devices
(2019)
Organic optoelectronics use carbon-based molecules to interface between light and electrical signals. The operation of these devices is determined by the dynamic behaviors of their charges and excited states. For example, ...
Spin Injection, Transport, and Modulation in III-V Semiconductors.
(2012)
Spintronic devices, which aim to utilize the quantum mechanical spin properties of electrons, offer the potential of high-speed and low-power operation with performance possibly exceeding those of conventional charge-based ...
New Methods for Terahertz and Ultrafast Infrared Spectroscopy of Biological Materials and Graphene Buffer Layer
(2019)
The development of advanced optical spectroscopy has always been a frontier in optics and material science. This dissertation develops several new methods for terahertz (THz) and infrared spectroscopy and presents their ...
Probing Heat Transport and Energy Conversion at the Atomic and Single Molecule Scale
(2018)
The study of heat transport and energy conversion constitutes an important subject in modern physics and engineering research. The widely-applied Fourier’s and Planck’s laws have proven to be very useful to describe heat ...
Exciton Transport and Strain Engineering in Atomically Thin Semiconductors
(2021)
The explosive energy demand by the communication and information technologies sector in the age of artificial intelligence (AI) calls for increasingly efficient electronics. One promising alternative to the inefficient ...
Surface Dimer Engineering and Properties of GaAs(N)(Bi) Alloys
(2018)
Due to the significant bandgap narrowing induced by dilute fractions of N and Bi in III-V semiconductors, emerging dilute nitride-bismide semiconductor alloys are of significant interest for long-wavelength applications ...