Now showing items 2091-2095 of 2095
Growth and properties of quasiperiodic heterostructures
(Elsevier, 1987-02-02)
We have recently demonstrated the MBE growth of heterostructures in which layers of GaAs and AlAs were deposited in a Fibonacci sequence. This yields a quasiperiodic structure with the ratio of incommensurate periods equal ...
Electric field effects on intersubband transitions in quantum well structures
(Elsevier, 1987)
We report on a Raman scattering study of the electric-field dependence of c0 --> c1 intersubband transitions of electrons in a 264 A GaAs- Al0.3Ga0.7As quantum-well structure. The measured Stark shifts are in very good ...
Growth and properties of In0.52Al0.48As/In0.53Ga0.47As, GaAS: In and InGaAs/GaAs multilayers
(Elsevier, 1987-02-02)
We have investigated the properties of some In-containing materials and heterostructures grown by molecular beam epitaxy on GaAs and InP substrates. Photoluminescence spectra of InGaAs/InAlAs quantum wells have been related ...
Die Coulomb-Energien leichter Atomkerne
(Springer-Verlag, 1960-04)
A compilation of the known data on Coulomb energy differences of isobaric doublets and isobaric triplets is given. Plots of the Coulomb energy differences versus ¯Z/A 1/3 with ¯Z =( Z 1 + Z 2 )/2 show an analogous shell ...