Now showing items 5871-5880 of 5908
Electric field effects on intersubband transitions in quantum well structures
(Elsevier, 1987)
We report on a Raman scattering study of the electric-field dependence of c0 --> c1 intersubband transitions of electrons in a 264 A GaAs- Al0.3Ga0.7As quantum-well structure. The measured Stark shifts are in very good ...
New supersymmetric solutions of N = 2, D = 5 gauged supergravity with hyperscalars
(IOP Publishing Ltd, 2007-10-01)
We construct new supersymmetric solutions, including AdS bubbles, in an N = 2 truncation of five-dimensional N = 8 gauged supergravity. This particular truncation is given by N = 2 gauged supergravity coupled to two ...
Growth and properties of In0.52Al0.48As/In0.53Ga0.47As, GaAS: In and InGaAs/GaAs multilayers
(Elsevier, 1987-02-02)
We have investigated the properties of some In-containing materials and heterostructures grown by molecular beam epitaxy on GaAs and InP substrates. Photoluminescence spectra of InGaAs/InAlAs quantum wells have been related ...
Investigation of Ultrafast Carrier Dynamics in InGaN/GaN‐Based Nanostructures Using Femtosecond Pump–Probe Absorption Spectroscopy
(Springer USWiley Periodicals, Inc., 2021-10)
Die Coulomb-Energien leichter Atomkerne
(Springer-Verlag, 1960-04)
A compilation of the known data on Coulomb energy differences of isobaric doublets and isobaric triplets is given. Plots of the Coulomb energy differences versus ¯Z/A 1/3 with ¯Z =( Z 1 + Z 2 )/2 show an analogous shell ...
A characteristic study of the superconducting phase in the niobium‐aluminum‐germanium system
(The American Institute of Physics, 1984-09-15)
A study has been made of the time and temperature dependence of the growth of the superconducting A‐15 phase and its grains in the Nb‐Al‐Ge system. In addition, changes in the microstructure and composition of the A‐15 ...
Low defect densities in molecular beam epitaxial GaAs achieved by isoelectronic In doping
(The American Institute of Physics, 1986-08-25)
We have studied the effects of adding small amounts of In (0.2–1.2%) to GaAs grown by molecular beam epitaxy. The density of four electron traps decreases in concentration by an order of magnitude, and the peak intensities ...
Ricci-Flat Metrics, Harmonic Forms and Brane Resolutions
(Springer-Verlag; Springer-Verlag Berlin Heidelberg, 2003-01)
We discuss the geometry and topology of the complete, non-compact, Ricci-flat Stenzel metric, on the tangent bundle of S n+1 . We obtain explicit results for all the metrics, and show how they can be obtained from first-order ...
Photoluminescence and electro‐optic properties of small (25–35 nm diameter) quantum boxes
(The American Institute of Physics, 1993-05-31)
The luminescence and electro‐optic properties of buried 25–35 nm quantum boxes have been measured. The quantum boxes were defined by a combination of molecular beam epitaxial growth and regrowth, electron beam lithography, ...
Erratum: Matrix Elements for Configuration d4d4 in a Weak Octahedral Field Using Racah Methods
(The American Institute of Physics, 1970-09-01)