Thermoelectric Behavior of Low Thermal Conductivity Cu-based and IV-V Chalcogenides

Abstract

In an ever-changing global environment, energy-related issues have become a central feature in the day-to-day conversations of the general public. A niche field that has recently made major advancements in conversion performance is thermoelectric (TE) energy conversion, where progress in material optimization has resulted in the highest efficiency thermoelectric materials to date. This includes superionic copper chalcogenides and IV-VI selenide compounds, such as Cu2Se and PbSe. Hence, this work focuses on the reliable synthesis and characterization of thermoelectric Cu-based and IV-V compounds. The electronic and optical properties of Cu-based energy conversion materials are greatly affected by synthesis-induced defects. To alleviate this issue, a novel method is developed using the topochemical redox reaction of CuSe2 into the desired material. It is predicted that CuSe2 -serves as a sacrificial structural template for the facile synthesis of structurally related materials. This was specifically verified in the case of CuInSe2, where CuSe2¬ is gradually transformed into CuInSe2 when reacted with elemental indium. Evidently, this synthetic method is a potential avenue for new material prediction and fabrication of novel composite materials. Using the method described, a composite of CuInSe2 and the known TE material, Cu2Se, is formed. Considering the structural similarity of both compounds, the efficiency of Cu2Se is drastically increased due to enhanced carrier mobility provided by tetrahedral indium subunits. These subunits simultaneously disrupt phonon propagation which result in reduced thermal conductivity and increased TE efficiency (ZT ≈ 2.6 at 850K). More significant is the increased chemical stability of Cu2Se while under applied current and temperature. It is observed that 1 mol % indium stabilizes Cu-ion migration, encouraging the commercialization of Cu2Se. Currently, CuAgSe is the only promising n-type Cu-based superionic TE material. Accordingly, to find a compatible material for p-type Cu2Se at high temperatures, a series of materials with the formula Cu4-xAgxSe2 were synthesized. It was found that the composition of Cu3AgSe2 (x = 1) is a two-phase mixture at low temperatures but becomes a single-phase p-type superionic material above 440 K. On the other hand, CuAg3Se2 (x = 3) remains a two-phase n-type mixture throughout the measured temperature range, contrary to reports of CuAg3Se2 as a single-phase high temperature material. The most important finding is the high temperature n-type behavior of CuAgSe (x = 2), which is the first instance of CuAgSe as an n-type superionic material above 470 K. It is proposed that off-stoichiometry leads to p-type behavior of CuAgSe. Moving to IV-V compounds, a detailed experimental and computational study of the material Pb7Bi4Se13 shows excellent thermoelectric properties for a non-optimized system. It behaves as an n-type material with a small band gap of about 0.23 eV, which is confirmed by band structure calculations and experimental results. It demonstrates ultralow thermal conductivity largely due to the complex atomic-scale structure and heavy constituent atoms. This results in a ZT of approximately 0.9 at 775 K, which is a promising value for further optimization. Additional results from CuSe2 structural template reactions show that several composite materials and new materials can be predicted and synthesized. This includes Cu2Se-Cu(Ga,Al)Se2 composites and new materials such as Cu(Zn,Ni)1.5Se2 and CuPb0.75Se2. Further work in Sn-Bi-Se compounds is discussed due their complex crystal structure that may result in promising thermoelectric properties. Finally, the preliminary results of high entropy chalcogenides are presented with discussion on future development.