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Memory Devices: Filament‐Free Bulk Resistive Memory Enables Deterministic Analogue Switching (Adv. Mater. 45/2020)
dc.contributor.authorLi, Yiyang
dc.contributor.authorFuller, Elliot J.
dc.contributor.authorSugar, Joshua D.
dc.contributor.authorYoo, Sangmin
dc.contributor.authorAshby, David S.
dc.contributor.authorBennett, Christopher H.
dc.contributor.authorHorton, Robert D.
dc.contributor.authorBartsch, Michael S.
dc.contributor.authorMarinella, Matthew J.
dc.contributor.authorLu, Wei D.
dc.contributor.authorTalin, A. Alec
dc.date.accessioned2020-12-02T14:39:19Z
dc.date.availableWITHHELD_12_MONTHS
dc.date.available2020-12-02T14:39:19Z
dc.date.issued2020-11
dc.identifier.citationLi, Yiyang; Fuller, Elliot J.; Sugar, Joshua D.; Yoo, Sangmin; Ashby, David S.; Bennett, Christopher H.; Horton, Robert D.; Bartsch, Michael S.; Marinella, Matthew J.; Lu, Wei D.; Talin, A. Alec (2020). "Memory Devices: Filament‐Free Bulk Resistive Memory Enables Deterministic Analogue Switching (Adv. Mater. 45/2020)." Advanced Materials 32(45): n/a-n/a.
dc.identifier.issn0935-9648
dc.identifier.issn1521-4095
dc.identifier.urihttps://hdl.handle.net/2027.42/163617
dc.publisherWiley Periodicals, Inc.
dc.subject.otheranalogue switching
dc.subject.otherneuromorphic computing
dc.subject.otherpoint defects
dc.subject.otherresistive switching
dc.subject.otherRRAM
dc.titleMemory Devices: Filament‐Free Bulk Resistive Memory Enables Deterministic Analogue Switching (Adv. Mater. 45/2020)
dc.typeArticle
dc.rights.robotsIndexNoFollow
dc.subject.hlbsecondlevelEngineering (General)
dc.subject.hlbsecondlevelMaterials Science and Engineering
dc.subject.hlbtoplevelEngineering
dc.description.peerreviewedPeer Reviewed
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/163617/1/adma202070339.pdfen_US
dc.identifier.doi10.1002/adma.202070339
dc.identifier.sourceAdvanced Materials
dc.owningcollnameInterdisciplinary and Peer-Reviewed


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