An AlGaN tunnel junction light emitting diode operating at 255 nm
dc.contributor.author | Pandey, Auysh | |
dc.contributor.author | Gim, Jiseok | |
dc.contributor.author | Hovden, Robert | |
dc.contributor.author | Mi, Zetian | |
dc.date.accessioned | 2021-04-23T12:42:48Z | |
dc.date.available | 2021-04-23T12:42:48Z | |
dc.date.issued | 2020-12-14 | |
dc.identifier.uri | https://hdl.handle.net/2027.42/167201 | en |
dc.description.abstract | We report on the demonstration of high-performance tunnel junction deep ultraviolet (UV) light-emitting diodes (LEDs) by using plasma- assisted molecular beam epitaxy. The device heterostructure was grown under slightly Ga-rich conditions to promote the formation of nanoscale clusters in the active region. The device operates at 255 nm with a maximum external quantum efficiency of 7.2% and wall-plug of 4%, which are nearly one to two orders of magnitude higher than those of previously reported tunnel junction devices operating at this wavelength. The devices exhibit highly stable emission, with a nearly constant emission peak with increasing current, due to the strong charge carrier confinement related to the presence of Ga-rich nanoclusters. Efficiency droop, however, is observed at relatively low current densities. Detailed temperature-dependent measurements suggest that the presence of efficiency droop of deep UV LEDs is largely due to electron overflow. | en_US |
dc.language.iso | en_US | en_US |
dc.title | An AlGaN tunnel junction light emitting diode operating at 255 nm | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Computer Science | |
dc.subject.hlbsecondlevel | Electrical Engineering | |
dc.subject.hlbtoplevel | Engineering | |
dc.contributor.affiliationum | Electrical Engineering and Computer Science, Department of | en_US |
dc.contributor.affiliationumcampus | Ann Arbor | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/167201/1/5.0036286.pdf | |
dc.identifier.doi | https://dx.doi.org/10.7302/876 | |
dc.description.filedescription | Description of 5.0036286.pdf : An AlGaN tunnel junction light emitting diode operating at 255 nm | |
dc.working.doi | 10.7302/876 | en_US |
dc.owningcollname | Electrical Engineering and Computer Science, Department of (EECS) |
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