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12-3: Invited Paper: Nanowire Micro-LEDs for Augmented Reality and Virtual Reality (AR/VR) Displays
dc.contributor.authorPandey, A.
dc.contributor.authorMalhotra, Y.
dc.contributor.authorReddeppa, M.
dc.contributor.authorXiao, Y.
dc.contributor.authorWu, Y.
dc.contributor.authorWang, P.
dc.contributor.authorLiu, X.
dc.contributor.authorMin, J.
dc.contributor.authorSun, Y.
dc.contributor.authorCoe-Sullivan, S.
dc.contributor.authorMi, Z.
dc.date.accessioned2023-09-06T00:47:10Z
dc.date.available2024-07-05 20:47:08en
dc.date.available2023-09-06T00:47:10Z
dc.date.issued2023-06
dc.identifier.citationPandey, A.; Malhotra, Y.; Reddeppa, M.; Xiao, Y.; Wu, Y.; Wang, P.; Liu, X.; Min, J.; Sun, Y.; Coe-Sullivan, S.; Mi, Z. (2023). "12-3: Invited Paper: Nanowire Micro-LEDs for Augmented Reality and Virtual Reality (AR/VR) Displays." SID Symposium Digest of Technical Papers 54(1): 148-150.
dc.identifier.issn0097-966X
dc.identifier.issn2168-0159
dc.identifier.urihttps://hdl.handle.net/2027.42/177628
dc.publisherWiley Periodicals, Inc.
dc.subject.othernanowires
dc.subject.otherInGaN
dc.subject.othermicro-LED
dc.subject.otherepitaxy
dc.title12-3: Invited Paper: Nanowire Micro-LEDs for Augmented Reality and Virtual Reality (AR/VR) Displays
dc.typeArticle
dc.rights.robotsIndexNoFollow
dc.subject.hlbsecondlevelElectrical Engineering
dc.subject.hlbtoplevelEngineering
dc.description.peerreviewedPeer Reviewed
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/177628/1/sdtp16510_am.pdf
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/177628/2/sdtp16510.pdf
dc.identifier.doi10.1002/sdtp.16510
dc.identifier.sourceSID Symposium Digest of Technical Papers
dc.identifier.citedreferenceP. Tian et al., " Size-dependent efficiency and efficiency droop of blue InGaN micro-light emitting diodes," Applied Physics Letters, vol. 101, no. 23, p. 231110, 2012.
dc.identifier.citedreferenceA. Pandey, Y. Malhotra, P. Wang, K. Sun, X. Liu, and Z. Mi, "N-polar InGaN/GaN nanowires: overcoming the efficiency cliff of red-emitting micro-LEDs," Photonics Research, vol. 10, no. 4, pp. 1107 - 1116, 2022.
dc.identifier.citedreferenceA. Pandey, Y. Malhotra, M. Reddeppa, Y. Xiao, Y. Wu, P. Wang, X. Liu, J. Min, Y. Sun, and Z. Mi, “ Size matters: Why nanowire micro-LEDs are the choice of next-generation mobile displays and virtual reality,” submitted to Information Display Workshop 2022 (IDW’22).
dc.identifier.citedreferenceX. Liu, Y. Wu, Y. Malhotra, Y. Sun, and Z. Mi, " Micrometer scale InGaN green light emitting diodes with ultra-stable operation," Applied Physics Letters, vol. 117, no. 1, p. 011104, 2020.
dc.identifier.citedreferenceY. Robin, M. Pristovsek, H. Amano, F. Oehler, R. Oliver, and C. Humphreys, " What is red? On the chromaticity of orange-red InGaN/GaN based LEDs," Journal of Applied Physics, vol. 124, no. 18, p. 183102, 2018.
dc.identifier.citedreferenceA. Pandey et al., " Strain Engineered N-polar InGaN Nanowires: Towards High Efficiency Red LEDs at the Micrometer Scale," Photonics Research (accepted), 2022.
dc.identifier.citedreferenceX. Liu et al., "N-polar InGaN nanowires: breaking the efficiency bottleneck of nano and micro LEDs," Photonics Research, vol. 10, no. 2, pp. 587 - 593, 2022.
dc.identifier.citedreferenceY. H. Ra, R. T. Rashid, X. Liu, J. Lee, and Z. Mi, " Scalable nanowire photonic crystals: Molding the light emission of InGaN," Advanced Functional Materials, vol. 27, no. 38, p. 1702364, 2017.
dc.identifier.citedreferenceH. Sekiguchi, K. Kishino, and A. Kikuchi, " Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate," Applied physics letters, vol. 96, no. 23, p. 231104, 2010.
dc.identifier.citedreferenceG. Tourbot et al., " Structural and optical properties of InGaN/GaN nanowire heterostructures grown by PA-MBE," Nanotechnology, vol. 22, no. 7, p. 075601, 2011.
dc.identifier.citedreferenceA. Pandey and Z. Mi, " III-Nitride Nanostructures for High Efficiency Micro-LEDs and Ultraviolet Optoelectronics," IEEE Journal of Quantum Electronics, 2022.
dc.identifier.citedreferenceY. Wu, Y. Xiao, I. Navid, K. Sun, Y. Malhotra, P. Wang, D. Wang, Y. Xu, A. Pandey, M. Reddeppa, W. Shin, J. Liu, J. Min, Z. Mi, “ InGaN micro-light-emitting diodes monolithically grown on Si: achieving ultra-stable operation through polarization and strain engineering,” vol. 11, 294, 2022.
dc.working.doiNOen
dc.owningcollnameInterdisciplinary and Peer-Reviewed


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