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Transient analysis of the TRAPATT mode in avalanche diodes

dc.contributor.authorKhochnevis-Rad, M.en_US
dc.contributor.authorLomax, R. J.en_US
dc.contributor.authorHaddad, George I.en_US
dc.date.accessioned2006-04-07T16:58:55Z
dc.date.available2006-04-07T16:58:55Z
dc.date.issued1978-10en_US
dc.identifier.citationKhochnevis-Rad, M., Lomax, R. J., Haddad, G. I. (1978/10)."Transient analysis of the TRAPATT mode in avalanche diodes." Solid-State Electronics 21(10): 1245-1252. <http://hdl.handle.net/2027.42/22523>en_US
dc.identifier.urihttp://www.sciencedirect.com/science/article/B6TY5-46VMB6V-2Y/2/5d0e1ddd2e030293077e09c68babf03ben_US
dc.identifier.urihttps://hdl.handle.net/2027.42/22523
dc.description.abstractThe start-up transient behavior of the TRAPATT mode of oscillation in both n+pp+ and p+nn+ Si avalanche diodes is studied by computer simulation in the time domain through a device-circuit interaction program. The start-up transient is investigated for various rise times of the applied bias pulse. The TRAPATT waveforms obtained from the simulation are in agreement with those observed experimentally. The theory of TRAPATT operation in a coaxial circuit is revised and its previous inconsistencies are resolved. The low-frequency bias-circuit oscillation is discussed and its relation to device instabilities and tuning-induced burnout are presented.en_US
dc.format.extent693961 bytes
dc.format.extent3118 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypetext/plain
dc.language.isoen_US
dc.publisherElsevieren_US
dc.titleTransient analysis of the TRAPATT mode in avalanche diodesen_US
dc.typeArticleen_US
dc.rights.robotsIndexNoFollowen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbsecondlevelElectrical Engineeringen_US
dc.subject.hlbtoplevelScienceen_US
dc.subject.hlbtoplevelEngineeringen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumElectron Physics Laboratory, Department of Electrical and Computer Engineering, The University of Michigan, Ann Arbor, MI 48109, U.S.A.en_US
dc.contributor.affiliationumElectron Physics Laboratory, Department of Electrical and Computer Engineering, The University of Michigan, Ann Arbor, MI 48109, U.S.A.en_US
dc.contributor.affiliationumElectron Physics Laboratory, Department of Electrical and Computer Engineering, The University of Michigan, Ann Arbor, MI 48109, U.S.A.en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/22523/1/0000067.pdfen_US
dc.identifier.doihttp://dx.doi.org/10.1016/0038-1101(78)90373-8en_US
dc.identifier.sourceSolid-State Electronicsen_US
dc.owningcollnameInterdisciplinary and Peer-Reviewed


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