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Analytic modeling of transit-time device drift regions with field-dependent transport coefficients
dc.contributor.authorMcCleer, Patrick J.en_US
dc.contributor.authorSnyder, D. E.en_US
dc.contributor.authorGrondin, Robert Oscaren_US
dc.contributor.authorHaddad, George I.en_US
dc.date.accessioned2006-04-07T18:10:21Z
dc.date.available2006-04-07T18:10:21Z
dc.date.issued1981-01en_US
dc.identifier.citationMcCleer, P. J., Snyder, D. E., Grondin, R. O., Haddad, G. I. (1981/01)."Analytic modeling of transit-time device drift regions with field-dependent transport coefficients." Solid-State Electronics 24(1): 37-48. <http://hdl.handle.net/2027.42/24491>en_US
dc.identifier.urihttp://www.sciencedirect.com/science/article/B6TY5-46VMB85-1H/2/0b661ce62c89245f140534bf4f4b4078en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/24491
dc.description.abstractAn iterative procedure for obtaining two-carrier d.c. solutions in regions of rapidly varying carrier concentration is presented. The procedure uses an analytic solution for the carrier concentrations in a region of linear spatial electric field variation. Field-dependent diffusion and field-dependent velocities are assumed. A single-carrier small-signal model for a drift region with a spatially varying field and field-dependent transport properties is presented. When applied to a BARITT device, results consistent with published experimental data are obtained. The importance of momentum relaxation effects in Si BARITT drift regions is discussed.en_US
dc.format.extent709962 bytes
dc.format.extent3118 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypetext/plain
dc.language.isoen_US
dc.publisherElsevieren_US
dc.titleAnalytic modeling of transit-time device drift regions with field-dependent transport coefficientsen_US
dc.typeArticleen_US
dc.rights.robotsIndexNoFollowen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbsecondlevelElectrical Engineeringen_US
dc.subject.hlbtoplevelScienceen_US
dc.subject.hlbtoplevelEngineeringen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumElectron Physics Laboratory, Department of Electrical and Computer Engineering, The University of Michigan, Ann Arbor, MI 48109, U.S.A.en_US
dc.contributor.affiliationumElectron Physics Laboratory, Department of Electrical and Computer Engineering, The University of Michigan, Ann Arbor, MI 48109, U.S.A.en_US
dc.contributor.affiliationumElectron Physics Laboratory, Department of Electrical and Computer Engineering, The University of Michigan, Ann Arbor, MI 48109, U.S.A.en_US
dc.contributor.affiliationumElectron Physics Laboratory, Department of Electrical and Computer Engineering, The University of Michigan, Ann Arbor, MI 48109, U.S.A.en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/24491/1/0000767.pdfen_US
dc.identifier.doihttp://dx.doi.org/10.1016/0038-1101(81)90210-0en_US
dc.identifier.sourceSolid-State Electronicsen_US
dc.owningcollnameInterdisciplinary and Peer-Reviewed


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