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Growth of high purity single crystals of arsenic

dc.contributor.authorUher, Ctiraden_US
dc.date.accessioned2006-04-07T18:41:55Z
dc.date.available2006-04-07T18:41:55Z
dc.date.issued1983-06en_US
dc.identifier.citationUher, C. (1983/06)."Growth of high purity single crystals of arsenic." Journal of Crystal Growth 62(1): 141-144. <http://hdl.handle.net/2027.42/25199>en_US
dc.identifier.urihttp://www.sciencedirect.com/science/article/B6TJ6-46BXXN4-5J/2/c30598ff5ebc1c406c8f6fc37dda1adden_US
dc.identifier.urihttps://hdl.handle.net/2027.42/25199
dc.description.abstractLarge, high quality, single crystals of arsenic have been grown from the melt in a high pressure bomb made from synthetic quartz. The crystals have residual resistance ratios (RRR) of up to 5500, the largest reported to date.en_US
dc.format.extent310523 bytes
dc.format.extent3118 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypetext/plain
dc.language.isoen_US
dc.publisherElsevieren_US
dc.titleGrowth of high purity single crystals of arsenicen_US
dc.typeArticleen_US
dc.rights.robotsIndexNoFollowen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbsecondlevelMathematicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumPhysics Department, The University of Michigan, Ann Arbor, Michigan 48109, USAen_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/25199/1/0000638.pdfen_US
dc.identifier.doihttp://dx.doi.org/10.1016/0022-0248(83)90017-9en_US
dc.identifier.sourceJournal of Crystal Growthen_US
dc.owningcollnameInterdisciplinary and Peer-Reviewed


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