Growth of high purity single crystals of arsenic
dc.contributor.author | Uher, Ctirad | en_US |
dc.date.accessioned | 2006-04-07T18:41:55Z | |
dc.date.available | 2006-04-07T18:41:55Z | |
dc.date.issued | 1983-06 | en_US |
dc.identifier.citation | Uher, C. (1983/06)."Growth of high purity single crystals of arsenic." Journal of Crystal Growth 62(1): 141-144. <http://hdl.handle.net/2027.42/25199> | en_US |
dc.identifier.uri | http://www.sciencedirect.com/science/article/B6TJ6-46BXXN4-5J/2/c30598ff5ebc1c406c8f6fc37dda1add | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/25199 | |
dc.description.abstract | Large, high quality, single crystals of arsenic have been grown from the melt in a high pressure bomb made from synthetic quartz. The crystals have residual resistance ratios (RRR) of up to 5500, the largest reported to date. | en_US |
dc.format.extent | 310523 bytes | |
dc.format.extent | 3118 bytes | |
dc.format.mimetype | application/pdf | |
dc.format.mimetype | text/plain | |
dc.language.iso | en_US | |
dc.publisher | Elsevier | en_US |
dc.title | Growth of high purity single crystals of arsenic | en_US |
dc.type | Article | en_US |
dc.rights.robots | IndexNoFollow | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbsecondlevel | Mathematics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Physics Department, The University of Michigan, Ann Arbor, Michigan 48109, USA | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/25199/1/0000638.pdf | en_US |
dc.identifier.doi | http://dx.doi.org/10.1016/0022-0248(83)90017-9 | en_US |
dc.identifier.source | Journal of Crystal Growth | en_US |
dc.owningcollname | Interdisciplinary and Peer-Reviewed |
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