Raman scattering and photoluminescence studies of two-dimensional electron systems in Ge/GaAs heterostructures
dc.contributor.author | Gammon, Daniel | en_US |
dc.contributor.author | Merlin, R. | en_US |
dc.contributor.author | Beard, W. T. | en_US |
dc.contributor.author | Wood, C. E. E. | en_US |
dc.date.accessioned | 2006-04-07T19:13:28Z | |
dc.date.available | 2006-04-07T19:13:28Z | |
dc.date.issued | 1985 | en_US |
dc.identifier.citation | Gammon, D., Merlin, R., Beard, W. T., Wood, C. E. E. (1985)."Raman scattering and photoluminescence studies of two-dimensional electron systems in Ge/GaAs heterostructures." Superlattices and Microstructures 1(2): 161-164. <http://hdl.handle.net/2027.42/25856> | en_US |
dc.identifier.uri | http://www.sciencedirect.com/science/article/B6WXB-4951G8G-BJ/2/10a0039d271d314d76037b42d516e20e | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/25856 | |
dc.identifier.uri | http://www.ncbi.nlm.nih.gov/sites/entrez?cmd=retrieve&db=pubmed&list_uids=3936411&dopt=citation | en_US |
dc.description.abstract | Resonant Raman scattering experiments on n-Ge/n-GaAs (100) heterostructures reveal transitions involving quasi-two-dimensional electron states in Ge-accumulation layers. The experiments were performed in the range of the E1-gap of Ge. The electronic scattering transforms into E1-luminescence as the laser energy is tuned above the resonance. Spectra obtained at higher excitation energies show luminescence bands associated with the E1 and E1 + [Delta]1-gap of Ge. The latter results are compared with recent data for bulk heavily-doped Ge. | en_US |
dc.format.extent | 372661 bytes | |
dc.format.extent | 3118 bytes | |
dc.format.mimetype | application/pdf | |
dc.format.mimetype | text/plain | |
dc.language.iso | en_US | |
dc.publisher | Elsevier | en_US |
dc.title | Raman scattering and photoluminescence studies of two-dimensional electron systems in Ge/GaAs heterostructures | en_US |
dc.type | Article | en_US |
dc.rights.robots | IndexNoFollow | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbsecondlevel | Mathematics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Department of Physics, University of Michigan, Ann Arbor, MI 48109, USA | en_US |
dc.contributor.affiliationum | Department of Physics, University of Michigan, Ann Arbor, MI 48109, USA | en_US |
dc.contributor.affiliationother | School of Electrical Engineering, Cornell University, Ithaca, NY 14853, USA | en_US |
dc.contributor.affiliationother | School of Electrical Engineering, Cornell University, Ithaca, NY 14853, USA | en_US |
dc.identifier.pmid | 3936411 | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/25856/1/0000419.pdf | en_US |
dc.identifier.doi | http://dx.doi.org/10.1016/0749-6036(85)90114-4 | en_US |
dc.identifier.source | Superlattices and Microstructures | en_US |
dc.owningcollname | Interdisciplinary and Peer-Reviewed |
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