Material properties and optical guiding in InGaAs-GaAs strained layer superlattices--a brief review
dc.contributor.author | Bhattacharya, Pallab K. | en_US |
dc.contributor.author | Das, Utpal | en_US |
dc.contributor.author | Juang, Feng‐Yuh | en_US |
dc.contributor.author | Nashimoto, Yasunobu | en_US |
dc.contributor.author | Dhar, Sunanda | en_US |
dc.date.accessioned | 2006-04-07T19:35:02Z | |
dc.date.available | 2006-04-07T19:35:02Z | |
dc.date.issued | 1986-02 | en_US |
dc.identifier.citation | Bhattacharya, Pallab K., Das, Utpal, Juang, F. Y., Nashimoto, Yasunobu, Dhar, Sunanda (1986/02)."Material properties and optical guiding in InGaAs-GaAs strained layer superlattices--a brief review." Solid-State Electronics 29(2): 261-267. <http://hdl.handle.net/2027.42/26280> | en_US |
dc.identifier.uri | http://www.sciencedirect.com/science/article/B6TY5-46VDT3G-N0/2/482b60d19d0c0961edcbaaaace778bfd | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/26280 | |
dc.description.abstract | Due to the absence of lattice-matching requirements, strained-layer superlattices offer a large tunability in bandgap and other material properties suitable for device applications. Encouraging progress has been made in the molecular-beam epitaxial and metalorganic-vapor-phase-epitaxial growth of strained-layer superlattices and in their characterization. These have been briefly reviewed here. Since a strained-layer superlattice allows the use of InxGa1-xAs layers with x-values up to ~ 1.0, a large variation of the refractive index from that in GaAs occurs due to mismatch strain and alloying. This variation in refractive index has been calculated. The increase in refractive index can be used to form optical guides in the SLS and such guides with good vertical confinement is demonstrated. Preliminary measurements of the impact-ionization parameters and deep-level traps in these materials are also reported. [alpha]/[beta] values close to and slightly greater than unity are measured. A single electron trap with thermal activation energy equal to 0.16 eV is identified. | en_US |
dc.format.extent | 730205 bytes | |
dc.format.extent | 3118 bytes | |
dc.format.mimetype | application/pdf | |
dc.format.mimetype | text/plain | |
dc.language.iso | en_US | |
dc.publisher | Elsevier | en_US |
dc.title | Material properties and optical guiding in InGaAs-GaAs strained layer superlattices--a brief review | en_US |
dc.type | Article | en_US |
dc.rights.robots | IndexNoFollow | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbsecondlevel | Electrical Engineering | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.subject.hlbtoplevel | Engineering | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, MI 48109, U.S.A. | en_US |
dc.contributor.affiliationum | Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, MI 48109, U.S.A. | en_US |
dc.contributor.affiliationum | Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, MI 48109, U.S.A. | en_US |
dc.contributor.affiliationum | Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, MI 48109, U.S.A. | en_US |
dc.contributor.affiliationum | Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, MI 48109, U.S.A. | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/26280/1/0000365.pdf | en_US |
dc.identifier.doi | http://dx.doi.org/10.1016/0038-1101(86)90049-3 | en_US |
dc.identifier.source | Solid-State Electronics | en_US |
dc.owningcollname | Interdisciplinary and Peer-Reviewed |
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