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Growth and properties of quasiperiodic heterostructures
dc.contributor.authorClarke, Royen_US
dc.contributor.authorTodd, J.en_US
dc.contributor.authorMerlin, R.en_US
dc.contributor.authorBajema, K.en_US
dc.contributor.authorBhattacharya, Pallab K.en_US
dc.contributor.authorJuang, Feng‐Yuhen_US
dc.date.accessioned2006-04-07T19:57:05Z
dc.date.available2006-04-07T19:57:05Z
dc.date.issued1987-02-02en_US
dc.identifier.citationClarke, Roy, Todd, J., Merlin, R., Bajema, K., Bhattacharya, P. K., Juang, F. -Y. (1987/02/02)."Growth and properties of quasiperiodic heterostructures." Journal of Crystal Growth 81(1-4): 116-119. <http://hdl.handle.net/2027.42/26807>en_US
dc.identifier.urihttp://www.sciencedirect.com/science/article/B6TJ6-46X9W77-V/2/ec1712bc989032ed2ec84ee6dd574b60en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/26807
dc.description.abstractWe have recently demonstrated the MBE growth of heterostructures in which layers of GaAs and AlAs were deposited in a Fibonacci sequence. This yields a quasiperiodic structure with the ratio of incommensurate periods equal to the golden mean, [gamma]. We present an overview of the unique structural, electronic, and vibrational properties of this new class of materials emphasizing the role of the incommensurate structure normal to the layers. Inevitably, defects are introduced by growth fluctuations but do not appear to disrupt significantly the special characteristics which originate from the quasiperiodic ordering.en_US
dc.format.extent313115 bytes
dc.format.extent3118 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypetext/plain
dc.language.isoen_US
dc.publisherElsevieren_US
dc.titleGrowth and properties of quasiperiodic heterostructuresen_US
dc.typeArticleen_US
dc.rights.robotsIndexNoFollowen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbsecondlevelMathematicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Physics, The University of Michigan, Ann Arbor, Michigan 48109, USAen_US
dc.contributor.affiliationumDepartment of Physics, The University of Michigan, Ann Arbor, Michigan 48109, USAen_US
dc.contributor.affiliationumDepartment of Physics, The University of Michigan, Ann Arbor, Michigan 48109, USAen_US
dc.contributor.affiliationumDepartment of Physics, The University of Michigan, Ann Arbor, Michigan 48109, USAen_US
dc.contributor.affiliationumSolid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109, USAen_US
dc.contributor.affiliationumSolid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109, USAen_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/26807/1/0000363.pdfen_US
dc.identifier.doihttp://dx.doi.org/10.1016/0022-0248(87)90376-9en_US
dc.identifier.sourceJournal of Crystal Growthen_US
dc.owningcollnameInterdisciplinary and Peer-Reviewed


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