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Acceptor Raman scattering in GaAs-AlxGa1-xAs quantum-well structures
dc.contributor.authorGammon, Danielen_US
dc.contributor.authorMerlin, R.en_US
dc.contributor.authorHuang, D.en_US
dc.contributor.authorMorkoc, H.en_US
dc.date.accessioned2006-04-07T19:57:07Z
dc.date.available2006-04-07T19:57:07Z
dc.date.issued1987-02-02en_US
dc.identifier.citationGammon, D., Merlin, R., Huang, D., Morkoc, H. (1987/02/02)."Acceptor Raman scattering in GaAs-AlxGa1-xAs quantum-well structures." Journal of Crystal Growth 81(1-4): 149-152. <http://hdl.handle.net/2027.42/26808>en_US
dc.identifier.urihttp://www.sciencedirect.com/science/article/B6TJ6-46X9W77-12/2/b57b90abe21f9ee3537b58cc71b5883een_US
dc.identifier.urihttps://hdl.handle.net/2027.42/26808
dc.description.abstractWe report resonant Raman scattering from Be acceptors in GaAs-AlxGa1-xAs quantum well structures, grown by molecular beam epitaxy. Center- and edge-doped samples with well widths in the range 70-165 A were investigated as a function of temperature and uniaxial stress. The data show confinement-induced shifts and splittings of the lowest-lying acceptor levels in good agreement with recent calculations, and also excitations that may involve impurity states derived from higher subbands. The stress dependence of the spectra reveals coupling of the lowest acceptor transition to transverse acoustic phonons. Confinement-split lines exhibit a not fully understood intensity exchange with increasing temperature.en_US
dc.format.extent347264 bytes
dc.format.extent3118 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypetext/plain
dc.language.isoen_US
dc.publisherElsevieren_US
dc.titleAcceptor Raman scattering in GaAs-AlxGa1-xAs quantum-well structuresen_US
dc.typeArticleen_US
dc.rights.robotsIndexNoFollowen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbsecondlevelMathematicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Physics, The University of Michigan, Ann Arbor, Michigan 48109, USAen_US
dc.contributor.affiliationumDepartment of Physics, The University of Michigan, Ann Arbor, Michigan 48109, USAen_US
dc.contributor.affiliationotherCoordinated Science Laboratory, University of Illinois at Urbana-Champaign, 1101 Springfield Avenue, Urbana, Illinois 61801, USAen_US
dc.contributor.affiliationotherCoordinated Science Laboratory, University of Illinois at Urbana-Champaign, 1101 Springfield Avenue, Urbana, Illinois 61801, USAen_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/26808/1/0000364.pdfen_US
dc.identifier.doihttp://dx.doi.org/10.1016/0022-0248(87)90382-4en_US
dc.identifier.sourceJournal of Crystal Growthen_US
dc.owningcollnameInterdisciplinary and Peer-Reviewed


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