Electric field effects on intersubband transitions in quantum well structures
dc.contributor.author | Bajema, K. | en_US |
dc.contributor.author | Merlin, R. | en_US |
dc.contributor.author | Juang, Feng‐Yuh | en_US |
dc.contributor.author | Hong, Songcheol | en_US |
dc.contributor.author | Singh, Jasprit | en_US |
dc.contributor.author | Bhattacharya, Pallab K. | en_US |
dc.date.accessioned | 2006-04-07T20:03:41Z | |
dc.date.available | 2006-04-07T20:03:41Z | |
dc.date.issued | 1987 | en_US |
dc.identifier.citation | Bajema, K., Merlin, R., Juang, F. -Y., Hong, S. -C., Singh, J., Bhattacharya, P. K. (1987)."Electric field effects on intersubband transitions in quantum well structures." Superlattices and Microstructures 3(6): 685-687. <http://hdl.handle.net/2027.42/26980> | en_US |
dc.identifier.uri | http://www.sciencedirect.com/science/article/B6WXB-4951FXN-69/2/2250266282d0d97d80b2c034cc0a39e5 | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/26980 | |
dc.description.abstract | We report on a Raman scattering study of the electric-field dependence of c0 --> c1 intersubband transitions of electrons in a 264 A GaAs- Al0.3Ga0.7As quantum-well structure. The measured Stark shifts are in very good agreement with theoretical predictions. The intensity of the intersubband peak increases rapidly with applied field due to parity-mixing. In contrast to the enhanced broadening shown by excitation resonances, the width of c0 --> c1 is nearly independent of the field. This feature is attributed to effects of structural disorder. | en_US |
dc.format.extent | 238343 bytes | |
dc.format.extent | 3118 bytes | |
dc.format.mimetype | application/pdf | |
dc.format.mimetype | text/plain | |
dc.language.iso | en_US | |
dc.publisher | Elsevier | en_US |
dc.title | Electric field effects on intersubband transitions in quantum well structures | en_US |
dc.type | Article | en_US |
dc.rights.robots | IndexNoFollow | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbsecondlevel | Mathematics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Department of Physics, The University of Michigan, Ann Arbor, MI 48109-1120, USA | en_US |
dc.contributor.affiliationum | Department of Physics, The University of Michigan, Ann Arbor, MI 48109-1120, USA | en_US |
dc.contributor.affiliationum | Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, MI 48109-2122, USA | en_US |
dc.contributor.affiliationum | Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, MI 48109-2122, USA | en_US |
dc.contributor.affiliationum | Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, MI 48109-2122, USA | en_US |
dc.contributor.affiliationum | Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, MI 48109-2122, USA | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/26980/1/0000547.pdf | en_US |
dc.identifier.doi | http://dx.doi.org/10.1016/0749-6036(87)90199-6 | en_US |
dc.identifier.source | Superlattices and Microstructures | en_US |
dc.owningcollname | Interdisciplinary and Peer-Reviewed |
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