Process Integration for active polysilicon resonant microstructures
dc.contributor.author | Putty, Michael W. | en_US |
dc.contributor.author | Chang, Shih-Chia | en_US |
dc.contributor.author | Howe, Roger T. | en_US |
dc.contributor.author | Robinson, Andrew L. | en_US |
dc.contributor.author | Wise, K. D. (Kensall D.) | en_US |
dc.date.accessioned | 2006-04-07T20:39:02Z | |
dc.date.available | 2006-04-07T20:39:02Z | |
dc.date.issued | 1989-11-15 | en_US |
dc.identifier.citation | Putty, Michael W., Chang, Shih-Chia, Howe, Roger T., Robinson, Andrew L., Wise, Kensald D. (1989/11/15)."Process Integration for active polysilicon resonant microstructures." Sensors and Actuators 20(1-2): 143-151. <http://hdl.handle.net/2027.42/27685> | en_US |
dc.identifier.uri | http://www.sciencedirect.com/science/article/B6W97-44YRGXV-4X/2/59e40be5539e8520e8e9917796504f94 | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/27685 | |
dc.description.abstract | Microsensors based on active polysilicon resonant microstructures are attractive because of their wide dynamic range, high sensitivity and frequency shift output. In this paper, we discuss processing issues for integrating electrostatically-driven and -sensed polysilicon microstructures with on-chip nMOS device. Surface-micro-machining using sacrificial spacer layers is used to obtain relased microstructures. A novel feature is the use of rapid thermal annealing (RTA) for strain relief of the ion-implanted, phosphorous-doped polysilicon. Resonance frequencies of cantilever beams indicate a lower-bound Young's modulus of about 90 GPa and an upper-bound compressive residual strain of only 0.002%, indicating that RTA is potentially useful for strain relief. | en_US |
dc.format.extent | 1085041 bytes | |
dc.format.extent | 3118 bytes | |
dc.format.mimetype | application/pdf | |
dc.format.mimetype | text/plain | |
dc.language.iso | en_US | |
dc.publisher | Elsevier | en_US |
dc.title | Process Integration for active polysilicon resonant microstructures | en_US |
dc.type | Article | en_US |
dc.rights.robots | IndexNoFollow | en_US |
dc.subject.hlbsecondlevel | Mechanical Engineering | en_US |
dc.subject.hlbsecondlevel | Industrial and Operations Engineering | en_US |
dc.subject.hlbtoplevel | Engineering | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Center for Integrated Sensors and Circuits, Solid-State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109 U.S.A. | en_US |
dc.contributor.affiliationum | Center for Integrated Sensors and Circuits, Solid-State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109 U.S.A. | en_US |
dc.contributor.affiliationother | General Motors Research Laboratory, Warren, MI 48090 U.S.A. | en_US |
dc.contributor.affiliationother | General Motors Research Laboratory, Warren, MI 48090 U.S.A. | en_US |
dc.contributor.affiliationother | Berkeley Sensor and Actuator Center, Department of Electrical Engineering and Computer Science, University of California, Berkeley, CA 94720 U.S.A. | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/27685/1/0000069.pdf | en_US |
dc.identifier.doi | http://dx.doi.org/10.1016/0250-6874(89)87112-4 | en_US |
dc.identifier.source | Sensors and Actuators | en_US |
dc.owningcollname | Interdisciplinary and Peer-Reviewed |
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